Interface effects in amorphous silicon/nitride multilayers

C. C. Tsai, M. J. Thompson, R. A. Street, M. Stutzmann, F. Ponce

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

This paper clarifies the role of interfaces on amorphous silicon/nitride superlattice stuctures using TEM, SIMS and ESR measurements. Contrary to the common assumption of atomically sharp interfaces, the interface width is determined to be of the order of ∼10 A ̊, arising from the reactive nature of the plasma. Moreover, our results indicate that there is a high density of charge residing at the interface, causing significant band bending in the multilayers.

Original languageEnglish (US)
Pages (from-to)995-998
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume77-78
Issue numberPART 2
DOIs
StatePublished - Dec 2 1985
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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