Integrated Solgel M Thin-Films on Pt, Si, and Gaas for Non-Volatile Memory Applications

Research output: Contribution to journalArticle

189 Citations (Scopus)

Abstract

Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.

Original languageEnglish (US)
Pages (from-to)37-46
Number of pages10
JournalFerroelectrics
Volume108
Issue number1
DOIs
StatePublished - Aug 1 1990

Fingerprint

Junction gate field effect transistors
JFET
random access memory
Sol-gels
integrated circuits
Integrated circuits
gels
Data storage equipment
Fabrication
Thin films
fabrication
Substrates
thin films
Processing
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Integrated Solgel M Thin-Films on Pt, Si, and Gaas for Non-Volatile Memory Applications. / Dey, Sandwip.

In: Ferroelectrics, Vol. 108, No. 1, 01.08.1990, p. 37-46.

Research output: Contribution to journalArticle

@article{f0d64d59f2cb4fea8540b99ce12fb05e,
title = "Integrated Solgel M Thin-Films on Pt, Si, and Gaas for Non-Volatile Memory Applications",
abstract = "Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F{\%}T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.",
author = "Sandwip Dey",
year = "1990",
month = "8",
day = "1",
doi = "10.1080/00150199008018730",
language = "English (US)",
volume = "108",
pages = "37--46",
journal = "Ferroelectrics",
issn = "0015-0193",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

TY - JOUR

T1 - Integrated Solgel M Thin-Films on Pt, Si, and Gaas for Non-Volatile Memory Applications

AU - Dey, Sandwip

PY - 1990/8/1

Y1 - 1990/8/1

N2 - Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.

AB - Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.

UR - http://www.scopus.com/inward/record.url?scp=84947886025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947886025&partnerID=8YFLogxK

U2 - 10.1080/00150199008018730

DO - 10.1080/00150199008018730

M3 - Article

AN - SCOPUS:84947886025

VL - 108

SP - 37

EP - 46

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

IS - 1

ER -