Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics