Abstract
Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.
Original language | English (US) |
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Pages (from-to) | 37-46 |
Number of pages | 10 |
Journal | Ferroelectrics |
Volume | 108 |
Issue number | 1 |
DOIs | |
State | Published - Aug 1 1990 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics