Integrated Solgel M Thin-Films on Pt, Si, and Gaas for Non-Volatile Memory Applications

Research output: Contribution to journalArticle

190 Scopus citations

Abstract

Properties of integrated sol-gel PZT thin-films of various ZrDi ratios, evaluated as a function of processing parameters, are presented and discussed. The substrate materials for the P2T depositions encompassed R, Si, and GaAs. The design, fabrication, and operation of a single F%T element combined with the GaAs JFET planar integrated circuit technology to produce non-volatile programmable random access memories (NVPRAM) 8 ∼pere sented.

Original languageEnglish (US)
Pages (from-to)37-46
Number of pages10
JournalFerroelectrics
Volume108
Issue number1
DOIs
StatePublished - Aug 1 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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