In_xGa_1-xas nanowires on silicon: One-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics

Engineering & Materials Science

• Epitaxial growth 100%
• Nanowires 88%
• Energy gap 80%
• Silicon 56%
• Metallorganic chemical vapor deposition 28%
• Substrates 18%
• Chemical analysis 17%
• Lattice mismatch 15%
• Photoluminescence 14%
• Stacking faults 12%
• Indium 11%
• Open circuit voltage 10%
• Zinc 9%
• Solar cells 9%
• Transmission electron microscopy 9%
• Short circuit currents 8%
• Current density 8%
• Masks 8%
• Aspect ratio 8%
• Catalysts 7%
• Scanning electron microscopy 7%

Physics & Astronomy

• epitaxy 70%
• nanowires 57%
• engineering 52%
• silicon 38%
• metalorganic chemical vapor deposition 16%
• high aspect ratio 9%
• short circuit currents 9%
• open circuit voltage 8%
• wurtzite 8%
• crystal defects 8%
• indium 8%
• catalysts 8%
• zinc 7%
• masks 7%
• wafers 6%
• solar cells 6%
• current density 6%
• photoluminescence 6%
• transmission electron microscopy 5%
• scanning electron microscopy 5%
• performance 3%

Chemical Compounds

• Epitaxial Growth 86%
• Nanowire 61%
• Band Gap 53%
• Chemical Vapour Deposition 16%
• Stacking Fault 12%
• Scanning Transmission Electron Microscopy 10%
• Short Circuit 9%
• Photoluminescence Spectrum 8%
• Solar Cell 7%
• Current Density 6%
• Voltage 6%
• Catalyst 3%