InGaN solar cells with regrown GaN homojunction tunnel contacts

Ehsan Vadiee, Evan A. Clinton, Heather McFavilen, Alex S. Weidenbach, Zachary Engel, Christopher Matthews, Chaomin Zhang, Chantal Arena, Richard King, Christiana Honsberg, W. Alan Doolittle

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.

Original languageEnglish (US)
Article number082304
JournalApplied Physics Express
Volume11
Issue number8
DOIs
StatePublished - Aug 1 2018

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Vadiee, E., Clinton, E. A., McFavilen, H., Weidenbach, A. S., Engel, Z., Matthews, C., Zhang, C., Arena, C., King, R., Honsberg, C., & Doolittle, W. A. (2018). InGaN solar cells with regrown GaN homojunction tunnel contacts. Applied Physics Express, 11(8), [082304]. https://doi.org/10.7567/APEX.11.082304