Abstract
Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.
| Original language | English (US) |
|---|---|
| Article number | 082304 |
| Journal | Applied Physics Express |
| Volume | 11 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1 2018 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
InGaN solar cells with regrown GaN homojunction tunnel contacts. / Vadiee, Ehsan; Clinton, Evan A.; McFavilen, Heather; Weidenbach, Alex S.; Engel, Zachary; Matthews, Christopher; Zhang, Chaomin; Arena, Chantal; King, Richard; Honsberg, Christiana; Doolittle, W. Alan.
In: Applied Physics Express, Vol. 11, No. 8, 082304, 01.08.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - InGaN solar cells with regrown GaN homojunction tunnel contacts
AU - Vadiee, Ehsan
AU - Clinton, Evan A.
AU - McFavilen, Heather
AU - Weidenbach, Alex S.
AU - Engel, Zachary
AU - Matthews, Christopher
AU - Zhang, Chaomin
AU - Arena, Chantal
AU - King, Richard
AU - Honsberg, Christiana
AU - Doolittle, W. Alan
PY - 2018/8/1
Y1 - 2018/8/1
N2 - Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.
AB - Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.
UR - http://www.scopus.com/inward/record.url?scp=85050958880&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050958880&partnerID=8YFLogxK
U2 - 10.7567/APEX.11.082304
DO - 10.7567/APEX.11.082304
M3 - Article
AN - SCOPUS:85050958880
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 8
M1 - 082304
ER -