InGaN solar cells with regrown GaN homojunction tunnel contacts

Ehsan Vadiee; Evan A. Clinton; Heather McFavilen; Alex S. Weidenbach; Zachary Engel; Christopher Matthews; Chaomin Zhang; Chantal Arena; Richard King; Christiana Honsberg; W. Alan Doolittle

doi:10.7567/APEX.11.082304

InGaN solar cells with regrown GaN homojunction tunnel contacts

Ehsan Vadiee, Evan A. Clinton, Heather McFavilen, Alex S. Weidenbach, Zachary Engel, Christopher Matthews, Chaomin Zhang, Chantal Arena, Richard King, Christiana Honsberg, W. Alan Doolittle

Research output: Contribution to journal › Article

9 Scopus citations

Abstract

Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.

Original language	English (US)
Article number	082304
Journal	Applied Physics Express
Volume	11
Issue number	8
DOIs	https://doi.org/10.7567/APEX.11.082304
State	Published - Aug 1 2018

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.11.082304

Fingerprint Dive into the research topics of 'InGaN solar cells with regrown GaN homojunction tunnel contacts'. Together they form a unique fingerprint.

Cite this

Vadiee, E., Clinton, E. A., McFavilen, H., Weidenbach, A. S., Engel, Z., Matthews, C., Zhang, C., Arena, C., King, R., Honsberg, C., & Doolittle, W. A. (2018). InGaN solar cells with regrown GaN homojunction tunnel contacts. Applied Physics Express, 11(8), [082304]. https://doi.org/10.7567/APEX.11.082304

InGaN solar cells with regrown GaN homojunction tunnel contacts. / Vadiee, Ehsan; Clinton, Evan A.; McFavilen, Heather; Weidenbach, Alex S.; Engel, Zachary; Matthews, Christopher; Zhang, Chaomin; Arena, Chantal; King, Richard ; Honsberg, Christiana; Doolittle, W. Alan.

In: Applied Physics Express, Vol. 11, No. 8, 082304, 01.08.2018.

Research output: Contribution to journal › Article

@article{a54c7fd8935d4420941f972a53bdc925,

title = "InGaN solar cells with regrown GaN homojunction tunnel contacts",

abstract = "Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.",

author = "Ehsan Vadiee and Clinton, {Evan A.} and Heather McFavilen and Weidenbach, {Alex S.} and Zachary Engel and Christopher Matthews and Chaomin Zhang and Chantal Arena and Richard King and Christiana Honsberg and Doolittle, {W. Alan}",

year = "2018",

month = aug,

day = "1",

doi = "10.7567/APEX.11.082304",

language = "English (US)",

volume = "11",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - InGaN solar cells with regrown GaN homojunction tunnel contacts

AU - Vadiee, Ehsan

AU - Clinton, Evan A.

AU - McFavilen, Heather

AU - Weidenbach, Alex S.

AU - Engel, Zachary

AU - Matthews, Christopher

AU - Zhang, Chaomin

AU - Arena, Chantal

AU - King, Richard

AU - Honsberg, Christiana

AU - Doolittle, W. Alan

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.

AB - Highly doped GaN p–n tunnel junction (TJ) contacts to InGaN solar cells are demonstrated, in which the TJs were grown by molecular beam epitaxy on top of active solar cell regions grown by metalorganic chemical vapor deposition. The effects of Si and Mg doping concentrations on solar cell characteristics are studied and used to improve turn-on voltage and series resistance. The highest doped cell with a TJ has an open-circuit voltage of 2.2 V, similar to that of the control cell fabricated using indium tin oxide (ITO), and a far less short-circuit current density loss from unwanted photogeneration in the TJ contact than in the ITO contact.

UR - http://www.scopus.com/inward/record.url?scp=85050958880&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050958880&partnerID=8YFLogxK

U2 - 10.7567/APEX.11.082304

DO - 10.7567/APEX.11.082304

M3 - Article

AN - SCOPUS:85050958880

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 8

M1 - 082304

ER -