InGaN/GaN multi-quantum well solar cells with highly-doped GaN p-n homo tunnel junction contacts are grown with a hybrid method where the active regions were grown with metal organic chemical vapor deposition and the TJ contacts were grown by plasma-assisted molecular beam epitaxy. Different solar cells with different TJ contacts were demonstrated by this method. The best solar cell featuring TJ exhibits a low leakage current density of 7.5×10-9 mA/cm2, an open-circuit voltage (VOC) of ∼2.2 V, and short circuit-current density (JSC) of ∼0.9 mA/cm2. Correlations are made between different characterization methods to draw conclusions about the behavior of the devices.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538685297
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018


Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village


  • Epitaxial layers
  • high hole concentration
  • indium gallium nitride
  • single-junction solar cell
  • tunnel junction

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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