InGaAs/InP superlattice mixing induced by Zn or Si diffusion

S. A. Schwarz, P. Mei, T. Venkatesan, R. Bhat, D. M. Hwang, C. L. Schwartz, M. Koza, L. Nazar, B. J. Skromme

Research output: Contribution to journalArticle

47 Scopus citations

Abstract

Recent studies have shown that Zn diffusion preferentially induces mixing (interdiffusion) of In and Ga in unstrained InGaAs/InP superlattices, with little diffusion of the anions. In the present study, a 3.1% lattice mismatch is accommodated in the mixed superlattice with no observable defects in layers on the order of the predicted critical layer thickness. At high concentrations, Zn resides preferentially in the InP layers in the form of Zn3P 2. In marked contrast to this behavior of Zn, Si diffusion is observed to cause comparable interdiffusion on the cation and anion sublattices within a narrow range of dopant concentration. This result is at odds with some recent mixing models and is consistent with a divacancy mixing mechanism.

Original languageEnglish (US)
Pages (from-to)1051-1053
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number12
DOIs
StatePublished - Dec 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'InGaAs/InP superlattice mixing induced by Zn or Si diffusion'. Together they form a unique fingerprint.

  • Cite this

    Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., & Skromme, B. J. (1988). InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53(12), 1051-1053. https://doi.org/10.1063/1.100406