Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys

Michael Todd, John Kouvetakis, Phillip Matsunaga, D. Chandrasekhar, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We describe the synthesis and use of the novel molecular precursors C(SiH 3) 4, CH 3GeH 3, and SiH 3CH 2GeH 3 to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with SiH 4 and GeH 4 between 470°C and 650°C we obtained: 1) heteroepitaxial Si 1-x-yGe xC y (y=0.04-0.06) alloys with C(SiH 3) 4; (2) polycrystalline alloys with carbon compositions ranging from 2-14 at.% with CH 3GeH 3; (3) mixtures of diamond cubic nanocrystals (Ge, Si 1-xGe x) and amorphous SiC with SiH 3CH 2GeH 3. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsMichael Hack, Eric A. Schiff, Arun Madan, Martin Powell, Akihisa Matsuda
PublisherMaterials Research Society
Pages529-534
Number of pages6
Volume377
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 18 1995Apr 21 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/18/954/21/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Todd, M., Kouvetakis, J., Matsunaga, P., Chandrasekhar, D., & Smith, D. (1995). Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys. In M. Hack, E. A. Schiff, A. Madan, M. Powell, & A. Matsuda (Eds.), Materials Research Society Symposium - Proceedings (Vol. 377, pp. 529-534). Materials Research Society.