Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys

Michael Todd; John Kouvetakis; Phillip Matsunaga; D. Chandrasekhar; David Smith

Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys

Michael Todd, John Kouvetakis, Phillip Matsunaga, D. Chandrasekhar, David Smith

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We describe the synthesis and use of the novel molecular precursors C(SiH ₃) ₄, CH ₃GeH ₃, and SiH ₃CH ₂GeH ₃ to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with SiH ₄ and GeH ₄ between 470°C and 650°C we obtained: 1) heteroepitaxial Si _1-x-yGe _xC _y (y=0.04-0.06) alloys with C(SiH ₃) ₄; (2) polycrystalline alloys with carbon compositions ranging from 2-14 at.% with CH ₃GeH ₃; (3) mixtures of diamond cubic nanocrystals (Ge, Si _1-xGe _x) and amorphous SiC with SiH ₃CH ₂GeH ₃. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	Michael Hack, Eric A. Schiff, Arun Madan, Martin Powell, Akihisa Matsuda
Publisher	Materials Research Society
Pages	529-534
Number of pages	6
Volume	377
State	Published - 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 18 1995 → Apr 21 1995

Other

Other	Proceedings of the 1995 MRS Spring Meeting
City	San Francisco, CA, USA
Period	4/18/95 → 4/21/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys. / Todd, Michael; Kouvetakis, John; Matsunaga, Phillip et al.
Materials Research Society Symposium - Proceedings. ed. / Michael Hack; Eric A. Schiff; Arun Madan; Martin Powell; Akihisa Matsuda. Vol. 377 Materials Research Society, 1995. p. 529-534.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Todd, M, Kouvetakis, J, Matsunaga, P, Chandrasekhar, D & Smith, D 1995, Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys. in M Hack, EA Schiff, A Madan, M Powell & A Matsuda (eds), Materials Research Society Symposium - Proceedings. vol. 377, Materials Research Society, pp. 529-534, Proceedings of the 1995 MRS Spring Meeting, San Francisco, CA, USA, 4/18/95.

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title = "Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys",

abstract = "We describe the synthesis and use of the novel molecular precursors C(SiH 3) 4, CH 3GeH 3, and SiH 3CH 2GeH 3 to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with SiH 4 and GeH 4 between 470°C and 650°C we obtained: 1) heteroepitaxial Si 1-x-yGe xC y (y=0.04-0.06) alloys with C(SiH 3) 4; (2) polycrystalline alloys with carbon compositions ranging from 2-14 at.% with CH 3GeH 3; (3) mixtures of diamond cubic nanocrystals (Ge, Si 1-xGe x) and amorphous SiC with SiH 3CH 2GeH 3. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed. ",

author = "Michael Todd and John Kouvetakis and Phillip Matsunaga and D. Chandrasekhar and David Smith",

year = "1995",

language = "English (US)",

volume = "377",

pages = "529--534",

editor = "Michael Hack and Schiff, {Eric A.} and Arun Madan and Martin Powell and Akihisa Matsuda",

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publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 18-04-1995 Through 21-04-1995",

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AU - Todd, Michael

AU - Kouvetakis, John

AU - Matsunaga, Phillip

AU - Chandrasekhar, D.

AU - Smith, David

PY - 1995

Y1 - 1995

N2 - We describe the synthesis and use of the novel molecular precursors C(SiH 3) 4, CH 3GeH 3, and SiH 3CH 2GeH 3 to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with SiH 4 and GeH 4 between 470°C and 650°C we obtained: 1) heteroepitaxial Si 1-x-yGe xC y (y=0.04-0.06) alloys with C(SiH 3) 4; (2) polycrystalline alloys with carbon compositions ranging from 2-14 at.% with CH 3GeH 3; (3) mixtures of diamond cubic nanocrystals (Ge, Si 1-xGe x) and amorphous SiC with SiH 3CH 2GeH 3. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed.

AB - We describe the synthesis and use of the novel molecular precursors C(SiH 3) 4, CH 3GeH 3, and SiH 3CH 2GeH 3 to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with SiH 4 and GeH 4 between 470°C and 650°C we obtained: 1) heteroepitaxial Si 1-x-yGe xC y (y=0.04-0.06) alloys with C(SiH 3) 4; (2) polycrystalline alloys with carbon compositions ranging from 2-14 at.% with CH 3GeH 3; (3) mixtures of diamond cubic nanocrystals (Ge, Si 1-xGe x) and amorphous SiC with SiH 3CH 2GeH 3. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed.

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M3 - Conference contribution

AN - SCOPUS:0029522062

VL - 377

SP - 529

EP - 534

BT - Materials Research Society Symposium - Proceedings

A2 - Hack, Michael

A2 - Schiff, Eric A.

A2 - Madan, Arun

A2 - Powell, Martin

A2 - Matsuda, Akihisa

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 18 April 1995 through 21 April 1995

ER -

Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys

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