Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

H. Han, Yeongseok Zoo, S. K. Bhagat, J. S. Lewis, Terry Alford

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Original languageEnglish (US)
Article number063710
JournalJournal of Applied Physics
Volume102
Issue number6
DOIs
StatePublished - Oct 8 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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