Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

H. Han; Yeongseok Zoo; S. K. Bhagat; J. S. Lewis; Terry Alford

doi:10.1063/1.2783952

Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

H. Han, Yeongseok Zoo, S. K. Bhagat, J. S. Lewis, Terry Alford

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Abstract

Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Original language	English (US)
Article number	063710
Journal	Journal of Applied Physics
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.2783952
State	Published - 2007

ASJC Scopus subject areas

General Physics and Astronomy

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@article{e2a1342d29474dc488e812c714c056ab,

title = "Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate",

abstract = "Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.",

author = "H. Han and Yeongseok Zoo and Bhagat, {S. K.} and Lewis, {J. S.} and Terry Alford",

note = "Funding Information: This research was sponsored by the Army Research Laboratory (ARL) and was performed under Cooperative Agreement No. W911NG-04-2-0005. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARL or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation hereon. This work was partially supported by National Science Foundation (L. Hess, Grant No. DMR—0602716), to whom the authors are greatly indebted. The authors would like to thank Professor N. Newman at Arizona state university and Dr. N. D. Theodore at freescale for assistance with this work. The authors acknowledge the use of facilities within the undergraduate lab in the School of Materials, Arizona State University.",

year = "2007",

doi = "10.1063/1.2783952",

language = "English (US)",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

AU - Han, H.

AU - Zoo, Yeongseok

AU - Bhagat, S. K.

AU - Lewis, J. S.

AU - Alford, Terry

N1 - Funding Information: This research was sponsored by the Army Research Laboratory (ARL) and was performed under Cooperative Agreement No. W911NG-04-2-0005. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARL or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation hereon. This work was partially supported by National Science Foundation (L. Hess, Grant No. DMR—0602716), to whom the authors are greatly indebted. The authors would like to thank Professor N. Newman at Arizona state university and Dr. N. D. Theodore at freescale for assistance with this work. The authors acknowledge the use of facilities within the undergraduate lab in the School of Materials, Arizona State University.

PY - 2007

Y1 - 2007

N2 - Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

AB - Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100°C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

UR - http://www.scopus.com/inward/record.url?scp=34848833818&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34848833818&partnerID=8YFLogxK

U2 - 10.1063/1.2783952

DO - 10.1063/1.2783952

M3 - Article

AN - SCOPUS:34848833818

SN - 0021-8979

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 063710

ER -

Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

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