Influence of a surface layer on DC- and RF-performance of AlInAs/GaInAs HFETs

J. Dickmann, H. Dambkes, H. Nickel, R. Losch, W. Schlapp, K. Ploog, Y. H. Zhang, J. Bottcher, H. Kunzel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A method of growing AlInAs/GaInAs HFETs on InP substrates that combines the low resistance of the doped surface with high breakdown behavior of the surface depletion by using a very thin highly doped cap layer that is just depleted by the surface potential is presented. As a tool to investigate the extension of the depletion region at the drain side of the gate with the electric field, the variation of Cgd with VGS is measured and related to Cgs. While in the case of the highly doped cap layer the boundary is essentially pinned by the n+-cap recess shape, resulting in a variation of Cgd with VDS by a factor of two, the surface depleted structure allows for a wide movement of the depletion zone resulting in a variation by more than a factor of five and leading to the excellent cutoff frequency of 240 GHz for 0.3 μm devices. The reverse gate diode characteristics are improved, resulting in low leakage current and high breakdown voltage.

Original languageEnglish (US)
Title of host publicationThird Int Conf Indium Phosphide Relat Mater
PublisherPubl by IEEE
Pages292-295
Number of pages4
ISBN (Print)0879426268
StatePublished - Dec 1 1991
Externally publishedYes
EventThird International Conference on Indium Phosphide and Related Materials - Cardiff, Wales
Duration: Apr 8 1991Apr 11 1991

Publication series

NameThird Int Conf Indium Phosphide Relat Mater

Other

OtherThird International Conference on Indium Phosphide and Related Materials
CityCardiff, Wales
Period4/8/914/11/91

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Dickmann, J., Dambkes, H., Nickel, H., Losch, R., Schlapp, W., Ploog, K., Zhang, Y. H., Bottcher, J., & Kunzel, H. (1991). Influence of a surface layer on DC- and RF-performance of AlInAs/GaInAs HFETs. In Third Int Conf Indium Phosphide Relat Mater (pp. 292-295). (Third Int Conf Indium Phosphide Relat Mater). Publ by IEEE.