Incremental resistance programming of programmable metallization cells for use as electronic synapses

D. Mahalanabis; Hugh Barnaby; Yago Gonzalez Velo; Michael Kozicki; Sarma Vrudhula; P. Dandamudi

doi:10.1016/j.sse.2014.07.002

Incremental resistance programming of programmable metallization cells for use as electronic synapses

D. Mahalanabis, Hugh Barnaby, Yago Gonzalez Velo, Michael Kozicki, Sarma Vrudhula, P. Dandamudi

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

In this work, we investigate the resistance switching behavior of Ag-Ge-Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.

Original language	English (US)
Pages (from-to)	39-44
Number of pages	6
Journal	Solid-State Electronics
Volume	100
DOIs	https://doi.org/10.1016/j.sse.2014.07.002
State	Published - Oct 2014

Keywords

Chalcogenide
PMC
ReRAM
Resistive memory
Synapse

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2014.07.002

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@article{944be7b4eeb64f968000f7c77ca61817,

title = "Incremental resistance programming of programmable metallization cells for use as electronic synapses",

abstract = "In this work, we investigate the resistance switching behavior of Ag-Ge-Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.",

keywords = "Chalcogenide, PMC, ReRAM, Resistive memory, Synapse",

author = "D. Mahalanabis and Hugh Barnaby and {Gonzalez Velo}, Yago and Michael Kozicki and Sarma Vrudhula and P. Dandamudi",

note = "Funding Information: This work was funded in part by the Defense Threat Reduction Agency under Grant No. HDTRA1-11-1-0055 , the NSF I/UCRC Center for Embedded Systems ( NSF award Grant No. 0856090 ) and Air Force Research Laboratory Det 8/RVKVE under Grant No. FA9452-13-1-0288 . The authors would like to thank Dr. James Reed of DTRA and Dr. Arthur Edwards of AFRL for their support of this work.",

year = "2014",

month = oct,

doi = "10.1016/j.sse.2014.07.002",

language = "English (US)",

volume = "100",

pages = "39--44",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Incremental resistance programming of programmable metallization cells for use as electronic synapses

AU - Mahalanabis, D.

AU - Barnaby, Hugh

AU - Gonzalez Velo, Yago

AU - Kozicki, Michael

AU - Vrudhula, Sarma

AU - Dandamudi, P.

N1 - Funding Information: This work was funded in part by the Defense Threat Reduction Agency under Grant No. HDTRA1-11-1-0055 , the NSF I/UCRC Center for Embedded Systems ( NSF award Grant No. 0856090 ) and Air Force Research Laboratory Det 8/RVKVE under Grant No. FA9452-13-1-0288 . The authors would like to thank Dr. James Reed of DTRA and Dr. Arthur Edwards of AFRL for their support of this work.

PY - 2014/10

Y1 - 2014/10

N2 - In this work, we investigate the resistance switching behavior of Ag-Ge-Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.

AB - In this work, we investigate the resistance switching behavior of Ag-Ge-Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.

KW - Chalcogenide

KW - PMC

KW - ReRAM

KW - Resistive memory

KW - Synapse

UR - http://www.scopus.com/inward/record.url?scp=84905010314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905010314&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2014.07.002

DO - 10.1016/j.sse.2014.07.002

M3 - Article

AN - SCOPUS:84905010314

SN - 0038-1101

VL - 100

SP - 39

EP - 44

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Incremental resistance programming of programmable metallization cells for use as electronic synapses

Abstract

Keywords

ASJC Scopus subject areas

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