Abstract

In this work, we investigate the resistance switching behavior of Ag-Ge-Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.

Original languageEnglish (US)
Pages (from-to)39-44
Number of pages6
JournalSolid-State Electronics
Volume100
DOIs
StatePublished - 2014

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synapses
Metallizing
programming
Electric potential
cells
electronics
electric potential
pulses
Hardware
Data storage equipment
hardware
RRAM

Keywords

  • Chalcogenide
  • PMC
  • ReRAM
  • Resistive memory
  • Synapse

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Incremental resistance programming of programmable metallization cells for use as electronic synapses. / Mahalanabis, D.; Barnaby, Hugh; Gonzalez Velo, Yago; Kozicki, Michael; Vrudhula, Sarma; Dandamudi, P.

In: Solid-State Electronics, Vol. 100, 2014, p. 39-44.

Research output: Contribution to journalArticle

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AU - Vrudhula, Sarma

AU - Dandamudi, P.

PY - 2014

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AB - In this work, we investigate the resistance switching behavior of Ag-Ge-Se based resistive memory (ReRAM) devices, otherwise known as programmable metallization cells (PMC). The devices studied are switched between high and low resistive states under externally applied electrical bias. The presence of multiple resistive states observed under both dc and pulse voltage application makes these devices promising candidates for use as electronic synapses in neuromorphic hardware implementations. Finally, the effect of varying pulse voltage magnitude and width on the change in resistance is observed through measurement.

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