Abstract

Cu-SiO2 and Ag-Ge30Se70 conductive bridging random access memory (CBRAM) resistive memories are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. in situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage ( I - V ) sweeps and pulse testing were performed. No total ionizing dose (TID) effects were observed during the in situ I - V measurements; however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

Original languageEnglish (US)
Article number8141957
Pages (from-to)192-199
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number1
DOIs
StatePublished - Jan 2018

Keywords

  • Chalcogenide glass
  • PMC
  • ReRAM
  • conductive bridging
  • conductive bridging random access memory (CBRAM)
  • dose effects
  • electrochemical metallization (ECM)
  • ionizing radiation
  • memristors
  • nanoionic memory
  • programmable metallization cell
  • radiation effects
  • resistive switching
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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