Abstract

Cu-SiO2 and Ag-Ge30Se70 CBRAM resistive memory are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. In situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage (I-V) sweeps and pulse testing were performed. No total ionizing dose effects were observed during the in situ I-V measurements, however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Dec 2 2017

Keywords

  • Anodes
  • Cathodes
  • CBRAM
  • chalcogenide glass
  • conductive bridging
  • dose effects
  • electrochemical metallization
  • ionizing radiation
  • Ionizing radiation
  • memristors
  • nanoionic memory
  • Neuromorphics
  • PMC
  • programmable metallization cell
  • Programming
  • Radiation effects
  • radiation effects
  • ReRAM
  • resistive switching
  • TID

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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