Abstract

Cu-SiO2 and Ag-Ge30Se70 CBRAM resistive memory are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. In situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage (I-V) sweeps and pulse testing were performed. No total ionizing dose effects were observed during the in situ I-V measurements, however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Dec 2 2017

Fingerprint

Ionizing radiation
programming
ionizing radiation
traveling ionospheric disturbances
Radiation effects
radiation effects
in situ measurement
pulses
direct current
Irradiation
Data storage equipment
dosage
irradiation
Testing
Electric potential
electric potential

Keywords

  • Anodes
  • Cathodes
  • CBRAM
  • chalcogenide glass
  • conductive bridging
  • dose effects
  • electrochemical metallization
  • ionizing radiation
  • Ionizing radiation
  • memristors
  • nanoionic memory
  • Neuromorphics
  • PMC
  • programmable metallization cell
  • Programming
  • Radiation effects
  • radiation effects
  • ReRAM
  • resistive switching
  • TID

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment. / Taggart, J. L.; Chen, W.; Gonzalez Velo, Yago; Barnaby, Hugh; Holbert, Keith; Kozicki, Michael.

In: IEEE Transactions on Nuclear Science, 02.12.2017.

Research output: Contribution to journalArticle

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keywords = "Anodes, Cathodes, CBRAM, chalcogenide glass, conductive bridging, dose effects, electrochemical metallization, ionizing radiation, Ionizing radiation, memristors, nanoionic memory, Neuromorphics, PMC, programmable metallization cell, Programming, Radiation effects, radiation effects, ReRAM, resistive switching, TID",
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AU - Holbert, Keith

AU - Kozicki, Michael

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N2 - Cu-SiO2 and Ag-Ge30Se70 CBRAM resistive memory are shown to be susceptible to ionizing radiation effects during neuromorphic pulse programming. In situ measurements were performed to evaluate the response of CBRAM devices during 60Co irradiation. DC current-voltage (I-V) sweeps and pulse testing were performed. No total ionizing dose effects were observed during the in situ I-V measurements, however, the conductance change caused by pulsed programming was shown to decrease with increasing TID. Both device types were tested beyond 1 Mrad.

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