In situ studies of metal-semiconductor interactions with synchrotron radiation

D. E. Sayers, P. T. Goeller, B. I. Boyanov, Robert Nemanich

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

Original languageEnglish (US)
Pages (from-to)1050-1051
Number of pages2
JournalJournal of Synchrotron Radiation
Volume5
Issue number3
StatePublished - May 1 1998
Externally publishedYes

Fingerprint

Beam plasma interactions
Synchrotron radiation
Thick films
thick films
Monolayers
synchrotron radiation
Semiconductor materials
germanium alloys
base pressure
silicon alloys
Reflection high energy electron diffraction
Metals
Reaction products
reaction products
metals
Cobalt
Signal to noise ratio
signal to noise ratios
cobalt
X ray photoelectron spectroscopy

Keywords

  • EXAFS
  • Metal-semiconductor contacts
  • Molecular-beam epitaxy
  • Silicon-germanium alloys

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Radiation

Cite this

In situ studies of metal-semiconductor interactions with synchrotron radiation. / Sayers, D. E.; Goeller, P. T.; Boyanov, B. I.; Nemanich, Robert.

In: Journal of Synchrotron Radiation, Vol. 5, No. 3, 01.05.1998, p. 1050-1051.

Research output: Contribution to journalArticle

Sayers, D. E. ; Goeller, P. T. ; Boyanov, B. I. ; Nemanich, Robert. / In situ studies of metal-semiconductor interactions with synchrotron radiation. In: Journal of Synchrotron Radiation. 1998 ; Vol. 5, No. 3. pp. 1050-1051.
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