In situ studies of metal-semiconductor interactions with synchrotron radiation

D. E. Sayers; P. T. Goeller; B. I. Boyanov; R. J. Nemanich

doi:10.1107/S0909049597015240

In situ studies of metal-semiconductor interactions with synchrotron radiation

D. E. Sayers, P. T. Goeller, B. I. Boyanov, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10^-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

Original language	English (US)
Pages (from-to)	1050-1051
Number of pages	2
Journal	Journal of synchrotron radiation
Volume	5
Issue number	3
DOIs	https://doi.org/10.1107/S0909049597015240
State	Published - May 1 1998
Externally published	Yes

Keywords

EXAFS
Metal-semiconductor contacts
Molecular-beam epitaxy
Silicon-germanium alloys

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Instrumentation

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10.1107/S0909049597015240

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title = "In situ studies of metal-semiconductor interactions with synchrotron radiation",

abstract = "The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.",

keywords = "EXAFS, Metal-semiconductor contacts, Molecular-beam epitaxy, Silicon-germanium alloys",

author = "Sayers, {D. E.} and Goeller, {P. T.} and Boyanov, {B. I.} and Nemanich, {R. J.}",

year = "1998",

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T1 - In situ studies of metal-semiconductor interactions with synchrotron radiation

AU - Sayers, D. E.

AU - Goeller, P. T.

AU - Boyanov, B. I.

AU - Nemanich, R. J.

PY - 1998/5/1

Y1 - 1998/5/1

N2 - The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

AB - The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

KW - EXAFS

KW - Metal-semiconductor contacts

KW - Molecular-beam epitaxy

KW - Silicon-germanium alloys

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In situ studies of metal-semiconductor interactions with synchrotron radiation

Abstract

Keywords

ASJC Scopus subject areas

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