In situ studies of metal-semiconductor interactions with synchrotron radiation

D. E. Sayers, P. T. Goeller, B. I. Boyanov, R. J. Nemanich

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

Original languageEnglish (US)
Pages (from-to)1050-1051
Number of pages2
JournalJournal of synchrotron radiation
Volume5
Issue number3
DOIs
StatePublished - May 1 1998
Externally publishedYes

Keywords

  • EXAFS
  • Metal-semiconductor contacts
  • Molecular-beam epitaxy
  • Silicon-germanium alloys

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Instrumentation

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