Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Suk Choi; Hee Jin Kim; Seong Soo Kim; Jianping Liu; Jeomoh Kim; Jae Hyun Ryou; Russell D. Dupuis; Alec M. Fischer; Fernando Ponce

doi:10.1063/1.3441373

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Suk Choi, Hee Jin Kim, Seong Soo Kim, Jianping Liu, Jeomoh Kim, Jae Hyun Ryou, Russell D. Dupuis, Alec M. Fischer, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

195 Scopus citations

Abstract

InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In_0.18 Al _0.82 N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al_0.2 Ga _0.8 N EBL. This indicates that an In_0.18 Al_0.82 N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

Original language	English (US)
Article number	221105
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3441373
State	Published - May 31 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3441373

Cite this

@article{17cf29cf58384388b799aad559c0250a,

title = "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer",

abstract = "InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18 Al 0.82 N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2 Ga 0.8 N EBL. This indicates that an In0.18 Al0.82 N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.",

author = "Suk Choi and Kim, {Hee Jin} and Kim, {Seong Soo} and Jianping Liu and Jeomoh Kim and Ryou, {Jae Hyun} and Dupuis, {Russell D.} and Fischer, {Alec M.} and Fernando Ponce",

note = "Funding Information: The work was supported by the Department of Energy under Contract No. DE-FC26-08NT01580. Authors also thank SAFC Hitech Inc. for their support. The work at ASU was also partially supported by a gift from Nichia Corporation. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3441373",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

AU - Choi, Suk

AU - Kim, Hee Jin

AU - Kim, Seong Soo

AU - Liu, Jianping

AU - Kim, Jeomoh

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Fischer, Alec M.

AU - Ponce, Fernando

N1 - Funding Information: The work was supported by the Department of Energy under Contract No. DE-FC26-08NT01580. Authors also thank SAFC Hitech Inc. for their support. The work at ASU was also partially supported by a gift from Nichia Corporation. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.

PY - 2010/5/31

Y1 - 2010/5/31

N2 - InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18 Al 0.82 N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2 Ga 0.8 N EBL. This indicates that an In0.18 Al0.82 N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

AB - InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18 Al 0.82 N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2 Ga 0.8 N EBL. This indicates that an In0.18 Al0.82 N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

UR - http://www.scopus.com/inward/record.url?scp=77953587417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953587417&partnerID=8YFLogxK

U2 - 10.1063/1.3441373

DO - 10.1063/1.3441373

M3 - Article

AN - SCOPUS:77953587417

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221105

ER -

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this