Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Suk Choi, Hee Jin Kim, Seong Soo Kim, Jianping Liu, Jeomoh Kim, Jae Hyun Ryou, Russell D. Dupuis, Alec M. Fischer, Fernando Ponce

Research output: Contribution to journalArticle

173 Scopus citations

Abstract

InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18 Al 0.82 N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2 Ga 0.8 N EBL. This indicates that an In0.18 Al0.82 N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

Original languageEnglish (US)
Article number221105
JournalApplied Physics Letters
Volume96
Issue number22
DOIs
StatePublished - May 31 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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