Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

S. R. Wilson; R. B. Gregory; W. M. Paulson; Stephen Krause; J. A. Leavitt; L. C. McIntyre; J. L. Seerveld; P. Stoss

doi:10.1063/1.97560

Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

S. R. Wilson, R. B. Gregory, W. M. Paulson, Stephen Krause, J. A. Leavitt, L. C. McIntyre, J. L. Seerveld, P. Stoss

Chemical Engineering

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3 Scopus citations

Abstract

Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20-30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.

Original language	English (US)
Pages (from-to)	660-662
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	11
DOIs	https://doi.org/10.1063/1.97560
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation",

abstract = "Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20-30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.",

author = "Wilson, {S. R.} and Gregory, {R. B.} and Paulson, {W. M.} and Stephen Krause and Leavitt, {J. A.} and McIntyre, {L. C.} and Seerveld, {J. L.} and P. Stoss",

year = "1986",

doi = "10.1063/1.97560",

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volume = "49",

pages = "660--662",

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T1 - Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

AU - Wilson, S. R.

AU - Gregory, R. B.

AU - Paulson, W. M.

AU - Krause, Stephen

AU - Leavitt, J. A.

AU - McIntyre, L. C.

AU - Seerveld, J. L.

AU - Stoss, P.

PY - 1986

Y1 - 1986

N2 - Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20-30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.

AB - Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20-30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.

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Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

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