Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation

S. R. Wilson, R. B. Gregory, W. M. Paulson, Stephen Krause, J. A. Leavitt, L. C. McIntyre, J. L. Seerveld, P. Stoss

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to increase by ∼ a factor of 10. These films have a 20-30% lower sheet resistance than films that were post-implant annealed only. The increase in grain size by the preimplant anneal reduces the grain boundary area and therefore, minimizes the amount of dopant in the grain boundary relative to the grain.

Original languageEnglish (US)
Pages (from-to)660-662
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number11
DOIs
StatePublished - 1986

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ion implantation
annealing
silicon
grain boundaries
grain size
wafers
causes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wilson, S. R., Gregory, R. B., Paulson, W. M., Krause, S., Leavitt, J. A., McIntyre, L. C., ... Stoss, P. (1986). Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation. Applied Physics Letters, 49(11), 660-662. https://doi.org/10.1063/1.97560

Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation. / Wilson, S. R.; Gregory, R. B.; Paulson, W. M.; Krause, Stephen; Leavitt, J. A.; McIntyre, L. C.; Seerveld, J. L.; Stoss, P.

In: Applied Physics Letters, Vol. 49, No. 11, 1986, p. 660-662.

Research output: Contribution to journalArticle

Wilson, SR, Gregory, RB, Paulson, WM, Krause, S, Leavitt, JA, McIntyre, LC, Seerveld, JL & Stoss, P 1986, 'Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation', Applied Physics Letters, vol. 49, no. 11, pp. 660-662. https://doi.org/10.1063/1.97560
Wilson, S. R. ; Gregory, R. B. ; Paulson, W. M. ; Krause, Stephen ; Leavitt, J. A. ; McIntyre, L. C. ; Seerveld, J. L. ; Stoss, P. / Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation. In: Applied Physics Letters. 1986 ; Vol. 49, No. 11. pp. 660-662.
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