Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

H. Xie; R. Prioli; A. M. Fischer; Fernando Ponce; R. M S Kawabata; L. D. Pinto; R. Jakomin; M. P. Pires; P. L. Souza

doi:10.1063/1.4958871

Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

H. Xie, R. Prioli, A. M. Fischer, Fernando Ponce, R. M S Kawabata, L. D. Pinto, R. Jakomin, M. P. Pires, P. L. Souza

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

Original language	English (US)
Article number	034301
Journal	Journal of Applied Physics
Volume	120
Issue number	3
DOIs	https://doi.org/10.1063/1.4958871
State	Published - Jul 21 2016

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.4958871

Cite this

@article{f49acaa7521b41989384a0ffa8635a51,

title = "Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation",

abstract = "The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.",

author = "H. Xie and R. Prioli and Fischer, {A. M.} and Fernando Ponce and Kawabata, {R. M S} and Pinto, {L. D.} and R. Jakomin and Pires, {M. P.} and Souza, {P. L.}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = jul,

day = "21",

doi = "10.1063/1.4958871",

language = "English (US)",

volume = "120",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

AU - Xie, H.

AU - Prioli, R.

AU - Fischer, A. M.

AU - Ponce, Fernando

AU - Kawabata, R. M S

AU - Pinto, L. D.

AU - Jakomin, R.

AU - Pires, M. P.

AU - Souza, P. L.

PY - 2016/7/21

Y1 - 2016/7/21

N2 - The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

AB - The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

UR - http://www.scopus.com/inward/record.url?scp=84978952260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978952260&partnerID=8YFLogxK

U2 - 10.1063/1.4958871

DO - 10.1063/1.4958871

M3 - Article

AN - SCOPUS:84978952260

SN - 0021-8979

VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 034301

ER -

Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this