Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

H. Xie, R. Prioli, A. M. Fischer, Fernando Ponce, R. M S Kawabata, L. D. Pinto, R. Jakomin, M. P. Pires, P. L. Souza

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Abstract

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.

Original languageEnglish (US)
Article number034301
JournalJournal of Applied Physics
Volume120
Issue number3
DOIs
StatePublished - Jul 21 2016

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Xie, H., Prioli, R., Fischer, A. M., Ponce, F., Kawabata, R. M. S., Pinto, L. D., Jakomin, R., Pires, M. P., & Souza, P. L. (2016). Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation. Journal of Applied Physics, 120(3), [034301]. https://doi.org/10.1063/1.4958871