@article{f49acaa7521b41989384a0ffa8635a51,
title = "Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation",
abstract = "The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.",
author = "H. Xie and R. Prioli and Fischer, {A. M.} and Fernando Ponce and Kawabata, {R. M S} and Pinto, {L. D.} and R. Jakomin and Pires, {M. P.} and Souza, {P. L.}",
note = "Funding Information: The research at ASU was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895, and in part by the NSF Materials World Network (DMR-1108450). The material design and growth was partially supported by the Fundacao de Amparo a Pesquisa do Estado de Rio de Janeiro (FAPERJ) and by the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq). Publisher Copyright: {\textcopyright} 2016 Author(s).",
year = "2016",
month = jul,
day = "21",
doi = "10.1063/1.4958871",
language = "English (US)",
volume = "120",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",
}