Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy

Yong Hang Zhang; David H. Chow

doi:10.1063/1.112424

Improved crystalline quality of AlAs_xSb_1-x grown on InAs by modulated molecular-beam epitaxy

Yong Hang Zhang, David H. Chow

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

This letter reports a dramatic improvement in crystalline quality of AlAs_0.16Sb_0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As₂ and Sb₂ beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAs_xSb_1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 Å are also clearly observed. Strong photoluminescence (PL) is observed from GaAs_0.08Sb_0.92/AlAs _0.16Sb_0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm²). At 5 K the PL linewidth is 4.5 meV.

Original language	English (US)
Pages (from-to)	3239-3241
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	25
DOIs	https://doi.org/10.1063/1.112424
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{10136c2816364b7abfb7042fa16dd01c,

title = "Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy",

abstract = "This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 {\AA} are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.",

author = "Zhang, {Yong Hang} and Chow, {David H.}",

year = "1994",

doi = "10.1063/1.112424",

language = "English (US)",

volume = "65",

pages = "3239--3241",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy

AU - Zhang, Yong Hang

AU - Chow, David H.

PY - 1994

Y1 - 1994

N2 - This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 Å are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.

AB - This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 Å are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.

UR - http://www.scopus.com/inward/record.url?scp=0012758434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012758434&partnerID=8YFLogxK

U2 - 10.1063/1.112424

DO - 10.1063/1.112424

M3 - Article

AN - SCOPUS:0012758434

SN - 0003-6951

VL - 65

SP - 3239

EP - 3241

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Improved crystalline quality of AlAs_xSb_1-x grown on InAs by modulated molecular-beam epitaxy

Abstract

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