Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy

Yong-Hang Zhang, David H. Chow

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 Å are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.

Original languageEnglish (US)
Pages (from-to)3239-3241
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number25
DOIs
StatePublished - 1994
Externally publishedYes

Fingerprint

molecular beam epitaxy
photoluminescence
shutters
photoexcitation
textures
microscopes
quantum wells
modulation
scanning
room temperature
diffraction
electrons
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy. / Zhang, Yong-Hang; Chow, David H.

In: Applied Physics Letters, Vol. 65, No. 25, 1994, p. 3239-3241.

Research output: Contribution to journalArticle

@article{10136c2816364b7abfb7042fa16dd01c,
title = "Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy",
abstract = "This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 {\AA} are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.",
author = "Yong-Hang Zhang and Chow, {David H.}",
year = "1994",
doi = "10.1063/1.112424",
language = "English (US)",
volume = "65",
pages = "3239--3241",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Improved crystalline quality of AlAsxSb1-x grown on InAs by modulated molecular-beam epitaxy

AU - Zhang, Yong-Hang

AU - Chow, David H.

PY - 1994

Y1 - 1994

N2 - This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 Å are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.

AB - This letter reports a dramatic improvement in crystalline quality of AlAs0.16Sb0.84 ordered alloys compared with random ones grown by modulated molecular-beam epitaxy (MMBE) on InAs substrates. The average As/Sb ratio in these ordered alloys is accurately controlled by the modulation of As2 and Sb2 beams. The surface morphology of the epilayers is mirrorlike to the naked eye and appears texture- and cluster-free under an electron scanning microscope. X-ray diffraction measurements reveal that the lattice-matched conditions for AlAsxSb1-x epilayers to InAs can be easily achieved by simply changing the As-shutter dutycycle. Distinct satellite peaks corresponding to the ordered structure with a period of about 11 Å are also clearly observed. Strong photoluminescence (PL) is observed from GaAs0.08Sb0.92/AlAs 0.16Sb0.84 single quantum well structures up to room temperature under a very low photoexcitation (5 W/cm2). At 5 K the PL linewidth is 4.5 meV.

UR - http://www.scopus.com/inward/record.url?scp=0012758434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012758434&partnerID=8YFLogxK

U2 - 10.1063/1.112424

DO - 10.1063/1.112424

M3 - Article

AN - SCOPUS:0012758434

VL - 65

SP - 3239

EP - 3241

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -