@article{b9cfb7dca56b455bbb20b2e11e2cae00,
title = "Impact of metastable phases on electrical properties of Si with different doping concentrations after processing by high-pressure torsion",
abstract = "Si (100) wafers with various doping levels were subjected to high-pressure torsion (HPT). The resistivities for all doping levels increased by one or two orders of magnitude after initial compression, but then decreased after 10 revolutions of HPT processing to ~0.1 Ω cm for normally and heavily doped samples, and to ~0.02 Ω cm for the ultraheavily doped sample. After annealing at 873 K, the resistivities increased by four orders of magnitude compared to the original Si wafers. These results indicate that the formation of metastable phases plays an important role in the electrical resistivities of HPT-processed samples.",
keywords = "Electrical properties, High pressure torsion, Metastable phases, Semiconductors, Severe plastic deformation",
author = "Bumsoo Chon and Yoshifumi Ikoma and Masamichi Kohno and Junichiro Shiomi and Martha McCartney and David Smith and Zenji Horita",
note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S) from the Japan Society for the Promotion of Science , Japan (No. JP26220909 ). The HPT process was carried out in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University. The authors also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S) from the Japan Society for the Promotion of Science, Japan (No. JP26220909). The HPT process was carried out in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University. The authors also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",
year = "2018",
month = dec,
doi = "10.1016/j.scriptamat.2018.08.011",
language = "English (US)",
volume = "157",
pages = "120--123",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier Limited",
}