Impact of metastable phases on electrical properties of Si with different doping concentrations after processing by high-pressure torsion

Bumsoo Chon, Yoshifumi Ikoma, Masamichi Kohno, Junichiro Shiomi, Martha McCartney, David Smith, Zenji Horita

Research output: Contribution to journalArticle

2 Scopus citations


Si (100) wafers with various doping levels were subjected to high-pressure torsion (HPT). The resistivities for all doping levels increased by one or two orders of magnitude after initial compression, but then decreased after 10 revolutions of HPT processing to ~0.1 Ω cm for normally and heavily doped samples, and to ~0.02 Ω cm for the ultraheavily doped sample. After annealing at 873 K, the resistivities increased by four orders of magnitude compared to the original Si wafers. These results indicate that the formation of metastable phases plays an important role in the electrical resistivities of HPT-processed samples.

Original languageEnglish (US)
Pages (from-to)120-123
Number of pages4
JournalScripta Materialia
StatePublished - Dec 1 2018



  • Electrical properties
  • High pressure torsion
  • Metastable phases
  • Semiconductors
  • Severe plastic deformation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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