Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells

M. I. Bertoni, S. Udelson, B. K. Newman, S. Bernardis, D. P. Fenning, H. F.W. Dekkers, E. Cornagliotti, A. Zuschlag, G. Micard, G. Hahn, G. Coletti, B. Lai, T. Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.

Original languageEnglish (US)
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages345-346
Number of pages2
DOIs
StatePublished - 2010
Externally publishedYes
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period6/20/106/25/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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