Impact of channel length and gate width of a n-MOSFET device on the threshold voltage and its fluctuations in presence of random channel dopants and random interface trap: A 3D ensemble Monte Carlo study

N. Ashraf, S. Joshi, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Previously we have reported the correlation in the threshold voltage fluctuations caused by (1) the presence of random number and random distribution of dopant ions in the channel region of a 45 nm n-MOSFET and, (2) single interface trap positioned at random from source to drain of the n-MOSFET. In past work we have also supplemented the numerical simulations by results obtained with the usage of existing analytical models [1-4]. From the knowledge of random telegraph noise (RTN) based device physics data pertaining to scaled devices, it can be speculated that, as the gate width and the channel length are increased, the fluctuations in threshold voltage variations tend to decrease to manageable levels aiding in reliable device performance for both analog and digital ICs with long-term operational characteristics. The Ensemble Monte Carlo (EMC) device simulation results presented in this paper for a 70 nm gate length and 90 nm gate width n-MOSFET device confirm the above findings.

Original languageEnglish (US)
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages455-458
Number of pages4
StatePublished - Aug 17 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Keywords

  • 3D Monte Carlo device simulations
  • Channel length and gate width scaling
  • Random dopant fluctuations
  • Random interface trap
  • Threshold voltage variations

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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  • Cite this

    Ashraf, N., Joshi, S., & Vasileska, D. (2012). Impact of channel length and gate width of a n-MOSFET device on the threshold voltage and its fluctuations in presence of random channel dopants and random interface trap: A 3D ensemble Monte Carlo study. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 455-458). (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).