III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices

Chloe A M Fabien, Aymeric Maros, Christiana Honsberg, William Alan Doolittle

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structures with varying thicknesses and compositions of the InGaN absorbing layer are studied. The N-rich MBE growth at low temperatures enables the growth of thick 10% and 20% InGaN films with minimal strain relaxation and defect generation. The characteristics of both large- and small-area devices are compared. While leakage current and high ideality factors associated with the double-heterojunction structure remain issues as detected by I–V and concentration effect measurements, the double-heterojunction cell with a record-high In content of 22% shows a promising photovoltaic response.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Dec 29 2015

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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