III-Nitride Double-Heterojunction Solar Cells with High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices

Chloe A M Fabien, Aymeric Maros, Christiana Honsberg, William Alan Doolittle

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structures with varying thicknesses and compositions of the InGaN absorbing layer are studied. The N-rich MBE growth at low temperatures enables the growth of thick 10% and 20% InGaN films with minimal strain relaxation and defect generation. The characteristics of both large-and small-area devices are compared. While leakage current and high ideality factors associated with the double-heterojunction structure remain issues as detected by I-V and concentration effect measurements, the double-heterojunction cell with a record-high In content of 22% shows a promising photovoltaic response.

Original languageEnglish (US)
Article number7368076
Pages (from-to)460-464
Number of pages5
JournalIEEE Journal of Photovoltaics
Volume6
Issue number2
DOIs
StatePublished - Mar 2016

Keywords

  • Heterojunction
  • Solar cell
  • indium gallium nitride (InGaN)
  • molecular beam epitaxy (MBE)
  • photovoltaic cell
  • semiconductor epitaxial layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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