8 Citations (Scopus)

Abstract

This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structures with varying thicknesses and compositions of the InGaN absorbing layer are studied. The N-rich MBE growth at low temperatures enables the growth of thick 10% and 20% InGaN films with minimal strain relaxation and defect generation. The characteristics of both large- and small-area devices are compared. While leakage current and high ideality factors associated with the double-heterojunction structure remain issues as detected by I–V and concentration effect measurements, the double-heterojunction cell with a record-high In content of 22% shows a promising photovoltaic response.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Dec 29 2015

Fingerprint

Gallium nitride
Indium
gallium nitrides
Nitrides
nitrides
indium
Heterojunctions
heterojunctions
Solar cells
solar cells
Molecular beam epitaxy
molecular beam epitaxy
Strain relaxation
Leakage currents
leakage
Defects
defects
Testing
cells
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers : Comparison of Large-Area and Small-Area Devices. / Fabien, Chloe A M; Maros, Aymeric; Honsberg, Christiana; Doolittle, William Alan.

In: IEEE Journal of Photovoltaics, 29.12.2015.

Research output: Contribution to journalArticle

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abstract = "This paper investigates the molecular beam epitaxy (MBE) growth, material characterization, and performance testing of indium gallium nitride (InGaN)/GaN double-heterojunction solar cells. Structures with varying thicknesses and compositions of the InGaN absorbing layer are studied. The N-rich MBE growth at low temperatures enables the growth of thick 10{\%} and 20{\%} InGaN films with minimal strain relaxation and defect generation. The characteristics of both large- and small-area devices are compared. While leakage current and high ideality factors associated with the double-heterojunction structure remain issues as detected by I–V and concentration effect measurements, the double-heterojunction cell with a record-high In content of 22{\%} shows a promising photovoltaic response.",
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AU - Maros, Aymeric

AU - Honsberg, Christiana

AU - Doolittle, William Alan

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