Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1-x. In contrast, for material deposited on to a substrate at a temperature Ts≥250°C, the hydrogen is incorporated onto Si-sites containing predominantly one H-atom.
|Original language||English (US)|
|Number of pages||9|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - Apr 1978|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)