Hot-electron effects in silicon quantized inversion layers

D. K. Ferry

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The mobility variations and carrier velocities are calculated for electrons in (100)-silicon quantum inversion layers at 300 and 77 K. Energy and momentum relaxation by intervalley phonons and acoustic phonons is considered. Scattering by local potential fluctuations and surface roughness is also considered. The calculations performed are based on a drifted Maxwellian distribution function and take into account repopulation of carriers among the various subbands. Formulas are presented for energy and momentum loss by intervalley phonons in both the zero- and first-order coupled cases. The calculations are compared with the data of Fang and Fowler at 300 K and very good agreement is found for the velocity-field curve.

Original languageEnglish (US)
Pages (from-to)5364-5371
Number of pages8
JournalPhysical Review B
Volume14
Issue number12
DOIs
StatePublished - 1976
Externally publishedYes

Fingerprint

Inversion layers
Hot electrons
Silicon
Phonons
hot electrons
phonons
inversions
Momentum
silicon
momentum
Maxwell-Boltzmann density function
Distribution functions
surface roughness
roughness
velocity distribution
energy dissipation
Surface roughness
Acoustics
distribution functions
Scattering

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hot-electron effects in silicon quantized inversion layers. / Ferry, D. K.

In: Physical Review B, Vol. 14, No. 12, 1976, p. 5364-5371.

Research output: Contribution to journalArticle

Ferry, D. K. / Hot-electron effects in silicon quantized inversion layers. In: Physical Review B. 1976 ; Vol. 14, No. 12. pp. 5364-5371.
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