We have measured the dependence of the electron velocity on electric field in four samples of In1-xGaxP1-yAsy at 77 and 300 K. In the same samples we have measured the temperature dependence of the Hall effect and the resistivity from 4.2 to 300 K. We have also studied the magnetic-field dependence of the magnetoresistance of several of the samples. The samples were n-type with carrier concentrations from 4.9 to 0.7 × 1016 cm-3. The compensation ratios were between 3.4 and 2.4. The lowest carrier concentration sample also had the lowest compensation ratio and exhibited a "peak" drift velocity of 3.6 × 107 cm/sec at an electric field of 4.0 kV/cm, higher than GaAs under similar conditions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry