Hot electron and magneto-transport properties of In1-xGaxP1-yAsy liquid phase epitaxial films

Bland Houston; J. B. Restorff; R. S. Allgaier; J. R. Burke; D. K. Ferry; G. A. Antypas

doi:10.1016/0038-1101(78)90120-X

Hot electron and magneto-transport properties of In_1-xGa_xP_1-yAs_y liquid phase epitaxial films

Bland Houston, J. B. Restorff, R. S. Allgaier, J. R. Burke, D. K. Ferry, G. A. Antypas

Research output: Contribution to journal › Article › peer-review

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Abstract

We have measured the dependence of the electron velocity on electric field in four samples of In_1-xGa_xP_1-yAs_y at 77 and 300 K. In the same samples we have measured the temperature dependence of the Hall effect and the resistivity from 4.2 to 300 K. We have also studied the magnetic-field dependence of the magnetoresistance of several of the samples. The samples were n-type with carrier concentrations from 4.9 to 0.7 × 10¹⁶ cm^-3. The compensation ratios were between 3.4 and 2.4. The lowest carrier concentration sample also had the lowest compensation ratio and exhibited a "peak" drift velocity of 3.6 × 10⁷ cm/sec at an electric field of 4.0 kV/cm, higher than GaAs under similar conditions.

Original language	English (US)
Pages (from-to)	91-94
Number of pages	4
Journal	Solid State Electronics
Volume	21
Issue number	1
DOIs	https://doi.org/10.1016/0038-1101(78)90120-X
State	Published - Jan 1978
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(78)90120-X

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title = "Hot electron and magneto-transport properties of In1-xGaxP1-yAsy liquid phase epitaxial films",

abstract = "We have measured the dependence of the electron velocity on electric field in four samples of In1-xGaxP1-yAsy at 77 and 300 K. In the same samples we have measured the temperature dependence of the Hall effect and the resistivity from 4.2 to 300 K. We have also studied the magnetic-field dependence of the magnetoresistance of several of the samples. The samples were n-type with carrier concentrations from 4.9 to 0.7 × 1016 cm-3. The compensation ratios were between 3.4 and 2.4. The lowest carrier concentration sample also had the lowest compensation ratio and exhibited a {"}peak{"} drift velocity of 3.6 × 107 cm/sec at an electric field of 4.0 kV/cm, higher than GaAs under similar conditions.",

author = "Bland Houston and Restorff, {J. B.} and Allgaier, {R. S.} and Burke, {J. R.} and Ferry, {D. K.} and Antypas, {G. A.}",

year = "1978",

month = jan,

doi = "10.1016/0038-1101(78)90120-X",

language = "English (US)",

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pages = "91--94",

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T1 - Hot electron and magneto-transport properties of In1-xGaxP1-yAsy liquid phase epitaxial films

AU - Houston, Bland

AU - Restorff, J. B.

AU - Allgaier, R. S.

AU - Burke, J. R.

AU - Ferry, D. K.

AU - Antypas, G. A.

PY - 1978/1

Y1 - 1978/1

N2 - We have measured the dependence of the electron velocity on electric field in four samples of In1-xGaxP1-yAsy at 77 and 300 K. In the same samples we have measured the temperature dependence of the Hall effect and the resistivity from 4.2 to 300 K. We have also studied the magnetic-field dependence of the magnetoresistance of several of the samples. The samples were n-type with carrier concentrations from 4.9 to 0.7 × 1016 cm-3. The compensation ratios were between 3.4 and 2.4. The lowest carrier concentration sample also had the lowest compensation ratio and exhibited a "peak" drift velocity of 3.6 × 107 cm/sec at an electric field of 4.0 kV/cm, higher than GaAs under similar conditions.

AB - We have measured the dependence of the electron velocity on electric field in four samples of In1-xGaxP1-yAsy at 77 and 300 K. In the same samples we have measured the temperature dependence of the Hall effect and the resistivity from 4.2 to 300 K. We have also studied the magnetic-field dependence of the magnetoresistance of several of the samples. The samples were n-type with carrier concentrations from 4.9 to 0.7 × 1016 cm-3. The compensation ratios were between 3.4 and 2.4. The lowest carrier concentration sample also had the lowest compensation ratio and exhibited a "peak" drift velocity of 3.6 × 107 cm/sec at an electric field of 4.0 kV/cm, higher than GaAs under similar conditions.

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JF - Solid State Electronics

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Hot electron and magneto-transport properties of In_1-xGa_xP_1-yAs_y liquid phase epitaxial films

Abstract

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