Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, C. Lange, I. Nemeth, M. Schwalm, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, Shane Johnson, J. B. Wang, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical emission and gain properties of Ga(AsSb) quantum-islands are investigate. These islands form during growth in a self-organized process in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an additional in-plane hole confinement of several hundreds of meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30 %. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density, lattice temperature, and excitation photon energy and reveal fast carrier capture into and relaxation within the quantum islands. Furthermore, the optical gain is measured using the variable stripe-length method and the advantages of such structures as active laser material are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7214
DOIs
StatePublished - 2009
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials XIII - San Jose, CA, United States
Duration: Jan 25 2009Jan 29 2009

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials XIII
CountryUnited States
CitySan Jose, CA
Period1/25/091/29/09

Fingerprint

Heterostructures
Algae
algae
Gallium Arsenide
Heterojunctions
Photoluminescence
Optical gain
Excitation
Electron energy levels
Photons
Equidistant
Transmission Electron Microscopy
Transmission electron microscopy
Energy Levels
photoluminescence
Lasers
laser materials
Photon
Laser
excitation

Keywords

  • Antimony
  • Dots
  • Photoluminescence
  • Spectroscopy

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Lange, C., Nemeth, I., ... Zhang, Y-H. (2009). Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7214). [72141A] https://doi.org/10.1117/12.808364

Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. / Horst, S.; Chatterjee, S.; Hantke, K.; Klar, P. J.; Lange, C.; Nemeth, I.; Schwalm, M.; Stolz, W.; Volz, K.; Bückers, C.; Thränhardt, A.; Koch, S. W.; Rühle, W.; Johnson, Shane; Wang, J. B.; Zhang, Yong-Hang.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7214 2009. 72141A.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horst, S, Chatterjee, S, Hantke, K, Klar, PJ, Lange, C, Nemeth, I, Schwalm, M, Stolz, W, Volz, K, Bückers, C, Thränhardt, A, Koch, SW, Rühle, W, Johnson, S, Wang, JB & Zhang, Y-H 2009, Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7214, 72141A, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, San Jose, CA, United States, 1/25/09. https://doi.org/10.1117/12.808364
Horst S, Chatterjee S, Hantke K, Klar PJ, Lange C, Nemeth I et al. Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7214. 2009. 72141A https://doi.org/10.1117/12.808364
Horst, S. ; Chatterjee, S. ; Hantke, K. ; Klar, P. J. ; Lange, C. ; Nemeth, I. ; Schwalm, M. ; Stolz, W. ; Volz, K. ; Bückers, C. ; Thränhardt, A. ; Koch, S. W. ; Rühle, W. ; Johnson, Shane ; Wang, J. B. ; Zhang, Yong-Hang. / Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7214 2009.
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AU - Lange, C.

AU - Nemeth, I.

AU - Schwalm, M.

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AU - Volz, K.

AU - Bückers, C.

AU - Thränhardt, A.

AU - Koch, S. W.

AU - Rühle, W.

AU - Johnson, Shane

AU - Wang, J. B.

AU - Zhang, Yong-Hang

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N2 - The optical emission and gain properties of Ga(AsSb) quantum-islands are investigate. These islands form during growth in a self-organized process in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an additional in-plane hole confinement of several hundreds of meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30 %. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density, lattice temperature, and excitation photon energy and reveal fast carrier capture into and relaxation within the quantum islands. Furthermore, the optical gain is measured using the variable stripe-length method and the advantages of such structures as active laser material are discussed.

AB - The optical emission and gain properties of Ga(AsSb) quantum-islands are investigate. These islands form during growth in a self-organized process in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an additional in-plane hole confinement of several hundreds of meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30 %. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density, lattice temperature, and excitation photon energy and reveal fast carrier capture into and relaxation within the quantum islands. Furthermore, the optical gain is measured using the variable stripe-length method and the advantages of such structures as active laser material are discussed.

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