TY - GEN
T1 - High voltage SOI MESFETs at the 45nm technology node
AU - Lepkowski, W.
AU - Wilk, S. J.
AU - Ghajar, M. R.
AU - Thornton, Trevor
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Depletion mode, n-channel MESFETs have been fabricated at a commercial 45nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. 45nm represents the most scaled technology node used to date for MESFET fabrication and was first introduced in [1]. The work presented here builds upon those results and introduces a slightly altered MESFET structure which enhances the voltage capability to >20V and improves its lifetime reliability. Current drives of >65mA/mm have been observed along with a peak cut-off frequency, fT, of 27GHz and maximum oscillation frequency, fmax, of 33GHz.
AB - Depletion mode, n-channel MESFETs have been fabricated at a commercial 45nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. 45nm represents the most scaled technology node used to date for MESFET fabrication and was first introduced in [1]. The work presented here builds upon those results and introduces a slightly altered MESFET structure which enhances the voltage capability to >20V and improves its lifetime reliability. Current drives of >65mA/mm have been observed along with a peak cut-off frequency, fT, of 27GHz and maximum oscillation frequency, fmax, of 33GHz.
UR - http://www.scopus.com/inward/record.url?scp=84873543777&partnerID=8YFLogxK
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U2 - 10.1109/SOI.2012.6404403
DO - 10.1109/SOI.2012.6404403
M3 - Conference contribution
AN - SCOPUS:84873543777
SN - 9781467326919
T3 - Proceedings - IEEE International SOI Conference
BT - 2012 IEEE International SOI Conference, SOI 2012
T2 - 2012 IEEE International SOI Conference, SOI 2012
Y2 - 1 October 2012 through 4 October 2012
ER -