Abstract

Depletion mode, n-channel MESFETs have been fabricated at a commercial 45nm SOI CMOS foundry without changing any of the process flow or including additional mask steps. 45nm represents the most scaled technology node used to date for MESFET fabrication and was first introduced in [1]. The work presented here builds upon those results and introduces a slightly altered MESFET structure which enhances the voltage capability to >20V and improves its lifetime reliability. Current drives of >65mA/mm have been observed along with a peak cut-off frequency, fT, of 27GHz and maximum oscillation frequency, fmax, of 33GHz.

Original languageEnglish (US)
Title of host publication2012 IEEE International SOI Conference, SOI 2012
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States
Duration: Oct 1 2012Oct 4 2012

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2012 IEEE International SOI Conference, SOI 2012
CountryUnited States
CityNapa, CA
Period10/1/1210/4/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High voltage SOI MESFETs at the 45nm technology node'. Together they form a unique fingerprint.

  • Cite this

    Lepkowski, W., Wilk, S. J., Ghajar, M. R., & Thornton, T. (2012). High voltage SOI MESFETs at the 45nm technology node. In 2012 IEEE International SOI Conference, SOI 2012 [6404403] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2012.6404403