HIGH VOLTAGE RESOLUTION ELECTRON MICROSCOPY OF COMPOUND SEMICONDUCTORS.

David Smith, Fernando Ponce, T. Yamashita, R. Sinclair

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Several II-VI compound semiconductors have been observed with a 500kv high resolution electron microscope. The lattice defects occurring in ZnTe and ZnSe are described and compared with those found in CdTe.

Original languageEnglish (US)
Title of host publicationLawrence Berkeley Laboratory (Report) LBL
EditorsR.M. Fisher, R. Gronsky, K.H. Westmacott
Pages31-34
Number of pages4
StatePublished - 1983
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Smith, D., Ponce, F., Yamashita, T., & Sinclair, R. (1983). HIGH VOLTAGE RESOLUTION ELECTRON MICROSCOPY OF COMPOUND SEMICONDUCTORS. In R. M. Fisher, R. Gronsky, & K. H. Westmacott (Eds.), Lawrence Berkeley Laboratory (Report) LBL (pp. 31-34)