High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

M. D. Feuer, R. H. Hendel, Richard Kiehl, J. C M Hwang, V. G. Keramidas, C. L. Allyn, R. Dingle

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

Original languageEnglish (US)
Pages (from-to)306-307
Number of pages2
JournalIEEE Electron Device Letters
Volume4
Issue number9
DOIs
StatePublished - 1983
Externally publishedYes

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Heterojunctions
Transistors
Coupled circuits
Electric potential
Molecular beam epitaxy
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Feuer, M. D., Hendel, R. H., Kiehl, R., Hwang, J. C. M., Keramidas, V. G., Allyn, C. L., & Dingle, R. (1983). High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors. IEEE Electron Device Letters, 4(9), 306-307. https://doi.org/10.1109/EDL.1983.25743

High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors. / Feuer, M. D.; Hendel, R. H.; Kiehl, Richard; Hwang, J. C M; Keramidas, V. G.; Allyn, C. L.; Dingle, R.

In: IEEE Electron Device Letters, Vol. 4, No. 9, 1983, p. 306-307.

Research output: Contribution to journalArticle

Feuer, M. D. ; Hendel, R. H. ; Kiehl, Richard ; Hwang, J. C M ; Keramidas, V. G. ; Allyn, C. L. ; Dingle, R. / High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors. In: IEEE Electron Device Letters. 1983 ; Vol. 4, No. 9. pp. 306-307.
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