High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

M. D. Feuer, R. H. Hendel, R. A. Kiehl, J. C.M. Hwang, V. G. Keramidas, C. L. Allyn, R. Dingle

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

Original languageEnglish (US)
Pages (from-to)306-307
Number of pages2
JournalIEEE Electron Device Letters
Volume4
Issue number9
DOIs
StatePublished - Sep 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Feuer, M. D., Hendel, R. H., Kiehl, R. A., Hwang, J. C. M., Keramidas, V. G., Allyn, C. L., & Dingle, R. (1983). High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors. IEEE Electron Device Letters, 4(9), 306-307. https://doi.org/10.1109/EDL.1983.25743