High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

M. D. Feuer; R. H. Hendel; R. A. Kiehl; J. C.M. Hwang; V. G. Keramidas; C. L. Allyn; R. Dingle

doi:10.1109/EDL.1983.25743

High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

M. D. Feuer, R. H. Hendel, R. A. Kiehl, J. C.M. Hwang, V. G. Keramidas, C. L. Allyn, R. Dingle

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

Original language	English (US)
Pages (from-to)	306-307
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	4
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1983.25743
State	Published - Sep 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1983.25743

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title = "High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors",

abstract = "We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.",

author = "Feuer, {M. D.} and Hendel, {R. H.} and Kiehl, {R. A.} and Hwang, {J. C.M.} and Keramidas, {V. G.} and Allyn, {C. L.} and R. Dingle",

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AU - Feuer, M. D.

AU - Hendel, R. H.

AU - Kiehl, R. A.

AU - Hwang, J. C.M.

AU - Keramidas, V. G.

AU - Allyn, C. L.

AU - Dingle, R.

PY - 1983/9

Y1 - 1983/9

N2 - We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

AB - We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

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High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

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