High spatial resolution tem study of thin film metal/6h-SIC interfaces

J. S. Bow, L. M. Porter, M. J. Kim, Ray Carpenter, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Thin films of titanium, platinum, and hafnium were deposited on single crystal n-type, (0001) 6H-SiC at room temperature in UHV. Microstructure and chemistry of their interfaces were analyzed by high spatial resolution TEM imaging and spectroscopy. Ti5Si3 and TiC were the two phases found in the reaction zone of Ti/SiC specimens annealed at 700°C. A carbon-containing amorphous layer formed between Pt and SiC when the annealing temperature went up to 750°C. There was no apparent reaction zone in Hf/SiC specimens annealed at 700°C for 60 min.. The change of electrical properties of metal/6H-SiC devices was attributed to these new product phases.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages571-576
Number of pages6
Volume280
ISBN (Print)1558991751
StatePublished - 1993
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Other

OtherProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/30/9212/4/92

Fingerprint

Hafnium
Metals
Thin films
Titanium
Platinum
Electric properties
Carbon
Single crystals
Spectroscopy
Annealing
Transmission electron microscopy
Imaging techniques
Temperature
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Bow, J. S., Porter, L. M., Kim, M. J., Carpenter, R., & Davis, R. F. (1993). High spatial resolution tem study of thin film metal/6h-SIC interfaces. In H. A. Atwater, E. Chason, M. H. Grabow, & M. G. Lagally (Eds.), Materials Research Society Symposium Proceedings (Vol. 280, pp. 571-576). Pittsburgh, PA, United States: Publ by Materials Research Society.

High spatial resolution tem study of thin film metal/6h-SIC interfaces. / Bow, J. S.; Porter, L. M.; Kim, M. J.; Carpenter, Ray; Davis, R. F.

Materials Research Society Symposium Proceedings. ed. / Harry A. Atwater; Eric Chason; Marcia H. Grabow; Max G. Lagally. Vol. 280 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 571-576.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bow, JS, Porter, LM, Kim, MJ, Carpenter, R & Davis, RF 1993, High spatial resolution tem study of thin film metal/6h-SIC interfaces. in HA Atwater, E Chason, MH Grabow & MG Lagally (eds), Materials Research Society Symposium Proceedings. vol. 280, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 571-576, Proceedings of the 1992 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/30/92.
Bow JS, Porter LM, Kim MJ, Carpenter R, Davis RF. High spatial resolution tem study of thin film metal/6h-SIC interfaces. In Atwater HA, Chason E, Grabow MH, Lagally MG, editors, Materials Research Society Symposium Proceedings. Vol. 280. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 571-576
Bow, J. S. ; Porter, L. M. ; Kim, M. J. ; Carpenter, Ray ; Davis, R. F. / High spatial resolution tem study of thin film metal/6h-SIC interfaces. Materials Research Society Symposium Proceedings. editor / Harry A. Atwater ; Eric Chason ; Marcia H. Grabow ; Max G. Lagally. Vol. 280 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 571-576
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