High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride

Martha McCartney, R. A. Youngman, R. G. Teller

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.

Original languageEnglish (US)
Pages (from-to)291-299
Number of pages9
JournalUltramicroscopy
Volume40
Issue number3
DOIs
StatePublished - 1992

Fingerprint

Aluminum nitride
High resolution electron microscopy
aluminum nitrides
electron microscopy
inversions
Defect structures
high resolution
defects
Oxygen
Imaging techniques
Defects
oxygen
simulation
aluminum nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation

Cite this

High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride. / McCartney, Martha; Youngman, R. A.; Teller, R. G.

In: Ultramicroscopy, Vol. 40, No. 3, 1992, p. 291-299.

Research output: Contribution to journalArticle

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