High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride

Martha McCartney; R. A. Youngman; R. G. Teller

doi:10.1016/0304-3991(92)90126-5

High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride

Martha McCartney, R. A. Youngman, R. G. Teller

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al₂O₃ system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.

Original language	English (US)
Pages (from-to)	291-299
Number of pages	9
Journal	Ultramicroscopy
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/0304-3991(92)90126-5
State	Published - Mar 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/0304-3991(92)90126-5

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title = "High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride",

abstract = "High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.",

author = "Martha McCartney and Youngman, {R. A.} and Teller, {R. G.}",

note = "Funding Information: This work was undertaken at the National Facdity for High Resolution Electron Microscopy within the Center for Sohd State Science at Arizona State Unlverstty supported by NSF Grant DMR-89-13384",

year = "1992",

month = mar,

doi = "10.1016/0304-3991(92)90126-5",

language = "English (US)",

volume = "40",

pages = "291--299",

journal = "Ultramicroscopy",

issn = "0304-3991",

publisher = "Elsevier",

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T1 - High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride

AU - McCartney, Martha

AU - Youngman, R. A.

AU - Teller, R. G.

N1 - Funding Information: This work was undertaken at the National Facdity for High Resolution Electron Microscopy within the Center for Sohd State Science at Arizona State Unlverstty supported by NSF Grant DMR-89-13384

PY - 1992/3

Y1 - 1992/3

N2 - High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.

AB - High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.

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U2 - 10.1016/0304-3991(92)90126-5

DO - 10.1016/0304-3991(92)90126-5

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EP - 299

JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 3

ER -

High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride

Abstract

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