High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride

Martha McCartney, R. A. Youngman, R. G. Teller

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.

Original languageEnglish (US)
Pages (from-to)291-299
Number of pages9
JournalUltramicroscopy
Volume40
Issue number3
DOIs
StatePublished - Mar 1992

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

Cite this