High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elements needed to describe the entire AlN-Al2O3 system. Image simulations of the proposed defect structure, for a range of imaging conditions, are in excellent agreement with experimental micrographs and provide substantial evidence for the validity of the proposed model.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics