High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum

Karan Mehta, Theeradetch Detchprohm, Young Jae Park, Yuh Shiuan Liu, Oliver Moreno, Shanthan Reddy Alugubelli, Shuo Wang, Fernando Ponce, Shyh Chiang Shen, Russell D. Dupuis, P. Douglas Yoder

Research output: Contribution to journalArticle

Abstract

Indium-free AlGaN based distributed Bragg reflectors (DBRs) in the UV spectrum are known to have very low reflectivities due both to the low refractive index contrast as well as limitations imposed by the critical thickness of AlGaN alloys (tensile strain of ~2.41% for AlN on GaN). Near-bandedge excitonic resonances influence the real part of AlGaN’s dielectric function, which sharply increases its refractive index as the photon energy approaches the bandgap. Furthermore, heavy doping (Si: 1020 cm-3) can modify the plasma frequency of AlGaN, leading to a reduction in its refractive index. Hence, judiciously choosing the high index material to exploit excitonic resonances and using heavy doping to reduce the refractive index of the low index material can enhance the index contrast and enable growth of epitaxial DBRs with higher reflectivities. We have demonstrated this technique both experimentally and by simulations for wavelengths ranging from 240-370 nm. Typically, over 50 epitaxial pairs are needed to achieve a mirror whose reflectivity exceeds 99%, but this can be shrunk down to 20-30 epitaxial pairs by depositing silver/aluminum underneath the epitaxial DBR stack. Silver and aluminum exhibit >90% reflectivity at the AlGaN/metal interface between wavelengths ranging from >360 nm and 180-670 nm respectively. A thinner DBR stack also reduces the thermal resistance, which would allow the VCSEL to achieve higher peak output powers, and simultaneously reduce overall tensile strain.

Original languageEnglish (US)
JournalIEEE Journal of Quantum Electronics
DOIs
StateAccepted/In press - Oct 25 2017

Fingerprint

Distributed Bragg reflectors
Bragg reflectors
visible spectrum
Refractive index
Silver
silver
refractivity
reflectance
Tensile strain
Doping (additives)
aluminum
Aluminum
Wavelength
Surface emitting lasers
plasma frequencies
thermal resistance
Heat resistance
wavelengths
Indium
indium

Keywords

  • distributed Bragg reflectors
  • mirror
  • ultraviolet laser diode
  • vertical cavity surface emitting laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Mehta, K., Detchprohm, T., Park, Y. J., Liu, Y. S., Moreno, O., Alugubelli, S. R., ... Yoder, P. D. (Accepted/In press). High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/JQE.2017.2766288

High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum. / Mehta, Karan; Detchprohm, Theeradetch; Park, Young Jae; Liu, Yuh Shiuan; Moreno, Oliver; Alugubelli, Shanthan Reddy; Wang, Shuo; Ponce, Fernando; Shen, Shyh Chiang; Dupuis, Russell D.; Yoder, P. Douglas.

In: IEEE Journal of Quantum Electronics, 25.10.2017.

Research output: Contribution to journalArticle

Mehta, K, Detchprohm, T, Park, YJ, Liu, YS, Moreno, O, Alugubelli, SR, Wang, S, Ponce, F, Shen, SC, Dupuis, RD & Yoder, PD 2017, 'High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum', IEEE Journal of Quantum Electronics. https://doi.org/10.1109/JQE.2017.2766288
Mehta, Karan ; Detchprohm, Theeradetch ; Park, Young Jae ; Liu, Yuh Shiuan ; Moreno, Oliver ; Alugubelli, Shanthan Reddy ; Wang, Shuo ; Ponce, Fernando ; Shen, Shyh Chiang ; Dupuis, Russell D. ; Yoder, P. Douglas. / High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum. In: IEEE Journal of Quantum Electronics. 2017.
@article{957f5d36cbd14c67bff0fedbf6cf82b9,
title = "High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum",
abstract = "Indium-free AlGaN based distributed Bragg reflectors (DBRs) in the UV spectrum are known to have very low reflectivities due both to the low refractive index contrast as well as limitations imposed by the critical thickness of AlGaN alloys (tensile strain of ~2.41{\%} for AlN on GaN). Near-bandedge excitonic resonances influence the real part of AlGaN’s dielectric function, which sharply increases its refractive index as the photon energy approaches the bandgap. Furthermore, heavy doping (Si: 1020 cm-3) can modify the plasma frequency of AlGaN, leading to a reduction in its refractive index. Hence, judiciously choosing the high index material to exploit excitonic resonances and using heavy doping to reduce the refractive index of the low index material can enhance the index contrast and enable growth of epitaxial DBRs with higher reflectivities. We have demonstrated this technique both experimentally and by simulations for wavelengths ranging from 240-370 nm. Typically, over 50 epitaxial pairs are needed to achieve a mirror whose reflectivity exceeds 99{\%}, but this can be shrunk down to 20-30 epitaxial pairs by depositing silver/aluminum underneath the epitaxial DBR stack. Silver and aluminum exhibit >90{\%} reflectivity at the AlGaN/metal interface between wavelengths ranging from >360 nm and 180-670 nm respectively. A thinner DBR stack also reduces the thermal resistance, which would allow the VCSEL to achieve higher peak output powers, and simultaneously reduce overall tensile strain.",
keywords = "distributed Bragg reflectors, mirror, ultraviolet laser diode, vertical cavity surface emitting laser",
author = "Karan Mehta and Theeradetch Detchprohm and Park, {Young Jae} and Liu, {Yuh Shiuan} and Oliver Moreno and Alugubelli, {Shanthan Reddy} and Shuo Wang and Fernando Ponce and Shen, {Shyh Chiang} and Dupuis, {Russell D.} and Yoder, {P. Douglas}",
year = "2017",
month = "10",
day = "25",
doi = "10.1109/JQE.2017.2766288",
language = "English (US)",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum

AU - Mehta, Karan

AU - Detchprohm, Theeradetch

AU - Park, Young Jae

AU - Liu, Yuh Shiuan

AU - Moreno, Oliver

AU - Alugubelli, Shanthan Reddy

AU - Wang, Shuo

AU - Ponce, Fernando

AU - Shen, Shyh Chiang

AU - Dupuis, Russell D.

AU - Yoder, P. Douglas

PY - 2017/10/25

Y1 - 2017/10/25

N2 - Indium-free AlGaN based distributed Bragg reflectors (DBRs) in the UV spectrum are known to have very low reflectivities due both to the low refractive index contrast as well as limitations imposed by the critical thickness of AlGaN alloys (tensile strain of ~2.41% for AlN on GaN). Near-bandedge excitonic resonances influence the real part of AlGaN’s dielectric function, which sharply increases its refractive index as the photon energy approaches the bandgap. Furthermore, heavy doping (Si: 1020 cm-3) can modify the plasma frequency of AlGaN, leading to a reduction in its refractive index. Hence, judiciously choosing the high index material to exploit excitonic resonances and using heavy doping to reduce the refractive index of the low index material can enhance the index contrast and enable growth of epitaxial DBRs with higher reflectivities. We have demonstrated this technique both experimentally and by simulations for wavelengths ranging from 240-370 nm. Typically, over 50 epitaxial pairs are needed to achieve a mirror whose reflectivity exceeds 99%, but this can be shrunk down to 20-30 epitaxial pairs by depositing silver/aluminum underneath the epitaxial DBR stack. Silver and aluminum exhibit >90% reflectivity at the AlGaN/metal interface between wavelengths ranging from >360 nm and 180-670 nm respectively. A thinner DBR stack also reduces the thermal resistance, which would allow the VCSEL to achieve higher peak output powers, and simultaneously reduce overall tensile strain.

AB - Indium-free AlGaN based distributed Bragg reflectors (DBRs) in the UV spectrum are known to have very low reflectivities due both to the low refractive index contrast as well as limitations imposed by the critical thickness of AlGaN alloys (tensile strain of ~2.41% for AlN on GaN). Near-bandedge excitonic resonances influence the real part of AlGaN’s dielectric function, which sharply increases its refractive index as the photon energy approaches the bandgap. Furthermore, heavy doping (Si: 1020 cm-3) can modify the plasma frequency of AlGaN, leading to a reduction in its refractive index. Hence, judiciously choosing the high index material to exploit excitonic resonances and using heavy doping to reduce the refractive index of the low index material can enhance the index contrast and enable growth of epitaxial DBRs with higher reflectivities. We have demonstrated this technique both experimentally and by simulations for wavelengths ranging from 240-370 nm. Typically, over 50 epitaxial pairs are needed to achieve a mirror whose reflectivity exceeds 99%, but this can be shrunk down to 20-30 epitaxial pairs by depositing silver/aluminum underneath the epitaxial DBR stack. Silver and aluminum exhibit >90% reflectivity at the AlGaN/metal interface between wavelengths ranging from >360 nm and 180-670 nm respectively. A thinner DBR stack also reduces the thermal resistance, which would allow the VCSEL to achieve higher peak output powers, and simultaneously reduce overall tensile strain.

KW - distributed Bragg reflectors

KW - mirror

KW - ultraviolet laser diode

KW - vertical cavity surface emitting laser

UR - http://www.scopus.com/inward/record.url?scp=85032455246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032455246&partnerID=8YFLogxK

U2 - 10.1109/JQE.2017.2766288

DO - 10.1109/JQE.2017.2766288

M3 - Article

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

ER -