High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design

Gopi Krishna Vijaya, Alex Freundlich, Dinghao Tang, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2900-2902
Number of pages3
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Nitrogen plasma
Plasma sources
Molecular beam epitaxy
Nitrides
Semiconductor quantum wells
Contamination
Nitrogen
Fluxes
Plasmas
Vents
Epilayers
Transport properties
Luminescence
Photoluminescence
Fabrication
Substrates
gallium arsenide

Keywords

  • dilute nitrides
  • gate valve
  • nitrogen plasma
  • quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Vijaya, G. K., Freundlich, A., Tang, D., & Smith, D. (2014). High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2900-2902). [6925538] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925538

High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design. / Vijaya, Gopi Krishna; Freundlich, Alex; Tang, Dinghao; Smith, David.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2900-2902 6925538.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vijaya, GK, Freundlich, A, Tang, D & Smith, D 2014, High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925538, Institute of Electrical and Electronics Engineers Inc., pp. 2900-2902, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925538
Vijaya GK, Freundlich A, Tang D, Smith D. High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2900-2902. 6925538 https://doi.org/10.1109/PVSC.2014.6925538
Vijaya, Gopi Krishna ; Freundlich, Alex ; Tang, Dinghao ; Smith, David. / High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2900-2902
@inproceedings{9eabaaab5e184ad394be6d58ce6c6b2e,
title = "High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design",
abstract = "Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.",
keywords = "dilute nitrides, gate valve, nitrogen plasma, quantum well",
author = "Vijaya, {Gopi Krishna} and Alex Freundlich and Dinghao Tang and David Smith",
year = "2014",
month = "10",
day = "15",
doi = "10.1109/PVSC.2014.6925538",
language = "English (US)",
isbn = "9781479943982",
pages = "2900--2902",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design

AU - Vijaya, Gopi Krishna

AU - Freundlich, Alex

AU - Tang, Dinghao

AU - Smith, David

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.

AB - Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.

KW - dilute nitrides

KW - gate valve

KW - nitrogen plasma

KW - quantum well

UR - http://www.scopus.com/inward/record.url?scp=84912076781&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912076781&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925538

DO - 10.1109/PVSC.2014.6925538

M3 - Conference contribution

AN - SCOPUS:84912076781

SN - 9781479943982

SP - 2900

EP - 2902

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -