@inproceedings{9eabaaab5e184ad394be6d58ce6c6b2e,
title = "High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design",
abstract = "Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.",
keywords = "dilute nitrides, gate valve, nitrogen plasma, quantum well",
author = "Vijaya, {Gopi Krishna} and Alex Freundlich and Dinghao Tang and David Smith",
year = "2014",
month = oct
day = "15",
doi = "10.1109/PVSC.2014.6925538",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2900--2902",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
}