TY - GEN
T1 - High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design
AU - Vijaya, Gopi Krishna
AU - Freundlich, Alex
AU - Tang, Dinghao
AU - Smith, David
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.
AB - Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.
KW - dilute nitrides
KW - gate valve
KW - nitrogen plasma
KW - quantum well
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U2 - 10.1109/PVSC.2014.6925538
DO - 10.1109/PVSC.2014.6925538
M3 - Conference contribution
AN - SCOPUS:84912076781
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 2900
EP - 2902
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -