Abstract
Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.
| Original language | English (US) |
|---|---|
| Title of host publication | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2900-2902 |
| Number of pages | 3 |
| ISBN (Print) | 9781479943982 |
| DOIs | |
| State | Published - Oct 15 2014 |
| Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014 |
Other
| Other | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 |
|---|---|
| Country | United States |
| City | Denver |
| Period | 6/8/14 → 6/13/14 |
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Keywords
- dilute nitrides
- gate valve
- nitrogen plasma
- quantum well
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design. / Vijaya, Gopi Krishna; Freundlich, Alex; Tang, Dinghao; Smith, David.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2900-2902 6925538.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High quality MBE grown dilute nitride quantum wells with novel Nitrogen-plasma source design
AU - Vijaya, Gopi Krishna
AU - Freundlich, Alex
AU - Tang, Dinghao
AU - Smith, David
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.
AB - Analysis of structural and luminescence properties of GaAsN epilayers grown by Molecular Beam Epitaxy (MBE) on GaAs substrates indicates the possibility of fabricating high nitrogen content (x>0.03) alloys. The conventional plasma source design where nitrogen flux is controlled using a manual shutter was first implemented. Significant N contamination of GaAs barrier layers which could severely affect carrier extraction and transport properties in targeted devices was observed via HAADF STEM. In order to overcome these limitations, a gate-valve-activated run-vent design was implemented that allowed the plasma to operate continuously during MBE growth, while N plasma flux changes during growth were monitored. The potential of this design for achieving very sharp switching schemes compatible with the fabrication of complex dilute-nitride quantum well structures, while preventing N contamination of GaAs barriers, was demonstrated via photoluminescence and STEM.
KW - dilute nitrides
KW - gate valve
KW - nitrogen plasma
KW - quantum well
UR - http://www.scopus.com/inward/record.url?scp=84912076781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912076781&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925538
DO - 10.1109/PVSC.2014.6925538
M3 - Conference contribution
AN - SCOPUS:84912076781
SN - 9781479943982
SP - 2900
EP - 2902
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -