High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Y. Q. Sun; Z. H. Wu; J. Yin; Y. Y. Fang; H. Wang; C. H. Yu; Xiong Hui; C. Q. Chen; Q. Y. Wei; T. Li; K. W. Sun; Fernando Ponce

doi:10.1016/j.tsf.2010.12.005

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Y. Q. Sun, Z. H. Wu, J. Yin, Y. Y. Fang, H. Wang, C. H. Yu, Xiong Hui, C. Q. Chen, Q. Y. Wei, T. Li, K. W. Sun, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Planar nonpolar (112̄0) a-plane GaN films have been grown by metalorganic chemical-vapor deposition directly on cone-shaped patterned r-plane sapphire substrates (PRSS) fabricated by dry etching. High-resolution X-ray diffractometers 2θ-ω scan confirmed that the films grown on PRSS are solely a-plane oriented, and the full width at half maximum values (FWHM) of the X-ray rocking curves for (112̄0) GaN along [0001]_GaN and [11̄00]_GaN were found to be 684 and 828″, respectively. As compared to the film grown on conventional r-plane sapphire substrate which typically has (112̄0) omega FWHM values of 900 and 2124″ along [0001]_GaN and [11̄00]_GaN respectively, the film grown on PRSS exhibits overall reduced omega FWHM values, and much smaller anisotropy behavior of crystallinity with respect to the in-plane orientation. The surface morphology is also improved by utilizing the PRSS technique. Cross-sectional transmission electron microscopy analysis shows that the density of threading dislocations has been greatly reduced from ~ 1.0 × 10¹⁰ cm ^{- 2} above the flat sapphire regions to ~ 1.0 × 10⁷ cm^{- 2} above the protruding cone patterns. The improvement of crystal quality and the increase of light extraction efficiency by using cone-shaped PRSS technique lead to a strong enhancement in the light emission of a-plane GaN films. These results indicate that growth of a-plane GaN films on cone-shaped PRSS shows promise for use in high-quality and high-cost-performance nonpolar GaN based devices.

Original language	English (US)
Pages (from-to)	2508-2512
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2010.12.005
State	Published - Feb 1 2011

Keywords

Cathodoluminescence
Metal-organic chemical vapor deposition
Nonpolar gallium nitride
Patterned sapphire substrate
Transmission electron microscopy
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.12.005

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@article{f884878e0d2f419a982824f8f3615b20,

title = "High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates",

abstract = "Planar nonpolar (11{\=2}0) a-plane GaN films have been grown by metalorganic chemical-vapor deposition directly on cone-shaped patterned r-plane sapphire substrates (PRSS) fabricated by dry etching. High-resolution X-ray diffractometers 2θ-ω scan confirmed that the films grown on PRSS are solely a-plane oriented, and the full width at half maximum values (FWHM) of the X-ray rocking curves for (11{\=2}0) GaN along [0001]GaN and [1{\=1}00]GaN were found to be 684 and 828″, respectively. As compared to the film grown on conventional r-plane sapphire substrate which typically has (11{\=2}0) omega FWHM values of 900 and 2124″ along [0001]GaN and [1{\=1}00]GaN respectively, the film grown on PRSS exhibits overall reduced omega FWHM values, and much smaller anisotropy behavior of crystallinity with respect to the in-plane orientation. The surface morphology is also improved by utilizing the PRSS technique. Cross-sectional transmission electron microscopy analysis shows that the density of threading dislocations has been greatly reduced from ~ 1.0 × 1010 cm - 2 above the flat sapphire regions to ~ 1.0 × 107 cm- 2 above the protruding cone patterns. The improvement of crystal quality and the increase of light extraction efficiency by using cone-shaped PRSS technique lead to a strong enhancement in the light emission of a-plane GaN films. These results indicate that growth of a-plane GaN films on cone-shaped PRSS shows promise for use in high-quality and high-cost-performance nonpolar GaN based devices.",

keywords = "Cathodoluminescence, Metal-organic chemical vapor deposition, Nonpolar gallium nitride, Patterned sapphire substrate, Transmission electron microscopy, X-ray diffraction",

author = "Sun, {Y. Q.} and Wu, {Z. H.} and J. Yin and Fang, {Y. Y.} and H. Wang and Yu, {C. H.} and Xiong Hui and Chen, {C. Q.} and Wei, {Q. Y.} and T. Li and Sun, {K. W.} and Fernando Ponce",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 60906023 and Grant No. 60976042 ), the National Basic Research Program of China (973 Program: 2010CB923204 ), the Program for New Century Excellent Talents in University (NCET- 08-0214 ), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090142120084 ), the Hubei Province Science Fund for Distinguished Young Scholars (Grant No. 2008CDB334 ), and the Key Programs of the Natural Science Foundation of Huazhong University of Science and Technology (Grant No. 20072008B ).",

year = "2011",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2010.12.005",

language = "English (US)",

volume = "519",

pages = "2508--2512",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

AU - Sun, Y. Q.

AU - Wu, Z. H.

AU - Yin, J.

AU - Fang, Y. Y.

AU - Wang, H.

AU - Yu, C. H.

AU - Hui, Xiong

AU - Chen, C. Q.

AU - Wei, Q. Y.

AU - Li, T.

AU - Sun, K. W.

AU - Ponce, Fernando

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 60906023 and Grant No. 60976042 ), the National Basic Research Program of China (973 Program: 2010CB923204 ), the Program for New Century Excellent Talents in University (NCET- 08-0214 ), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090142120084 ), the Hubei Province Science Fund for Distinguished Young Scholars (Grant No. 2008CDB334 ), and the Key Programs of the Natural Science Foundation of Huazhong University of Science and Technology (Grant No. 20072008B ).

PY - 2011/2/1

Y1 - 2011/2/1

N2 - Planar nonpolar (112̄0) a-plane GaN films have been grown by metalorganic chemical-vapor deposition directly on cone-shaped patterned r-plane sapphire substrates (PRSS) fabricated by dry etching. High-resolution X-ray diffractometers 2θ-ω scan confirmed that the films grown on PRSS are solely a-plane oriented, and the full width at half maximum values (FWHM) of the X-ray rocking curves for (112̄0) GaN along [0001]GaN and [11̄00]GaN were found to be 684 and 828″, respectively. As compared to the film grown on conventional r-plane sapphire substrate which typically has (112̄0) omega FWHM values of 900 and 2124″ along [0001]GaN and [11̄00]GaN respectively, the film grown on PRSS exhibits overall reduced omega FWHM values, and much smaller anisotropy behavior of crystallinity with respect to the in-plane orientation. The surface morphology is also improved by utilizing the PRSS technique. Cross-sectional transmission electron microscopy analysis shows that the density of threading dislocations has been greatly reduced from ~ 1.0 × 1010 cm - 2 above the flat sapphire regions to ~ 1.0 × 107 cm- 2 above the protruding cone patterns. The improvement of crystal quality and the increase of light extraction efficiency by using cone-shaped PRSS technique lead to a strong enhancement in the light emission of a-plane GaN films. These results indicate that growth of a-plane GaN films on cone-shaped PRSS shows promise for use in high-quality and high-cost-performance nonpolar GaN based devices.

AB - Planar nonpolar (112̄0) a-plane GaN films have been grown by metalorganic chemical-vapor deposition directly on cone-shaped patterned r-plane sapphire substrates (PRSS) fabricated by dry etching. High-resolution X-ray diffractometers 2θ-ω scan confirmed that the films grown on PRSS are solely a-plane oriented, and the full width at half maximum values (FWHM) of the X-ray rocking curves for (112̄0) GaN along [0001]GaN and [11̄00]GaN were found to be 684 and 828″, respectively. As compared to the film grown on conventional r-plane sapphire substrate which typically has (112̄0) omega FWHM values of 900 and 2124″ along [0001]GaN and [11̄00]GaN respectively, the film grown on PRSS exhibits overall reduced omega FWHM values, and much smaller anisotropy behavior of crystallinity with respect to the in-plane orientation. The surface morphology is also improved by utilizing the PRSS technique. Cross-sectional transmission electron microscopy analysis shows that the density of threading dislocations has been greatly reduced from ~ 1.0 × 1010 cm - 2 above the flat sapphire regions to ~ 1.0 × 107 cm- 2 above the protruding cone patterns. The improvement of crystal quality and the increase of light extraction efficiency by using cone-shaped PRSS technique lead to a strong enhancement in the light emission of a-plane GaN films. These results indicate that growth of a-plane GaN films on cone-shaped PRSS shows promise for use in high-quality and high-cost-performance nonpolar GaN based devices.

KW - Cathodoluminescence

KW - Metal-organic chemical vapor deposition

KW - Nonpolar gallium nitride

KW - Patterned sapphire substrate

KW - Transmission electron microscopy

KW - X-ray diffraction

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U2 - 10.1016/j.tsf.2010.12.005

DO - 10.1016/j.tsf.2010.12.005

M3 - Article

AN - SCOPUS:79551502920

SN - 0040-6090

VL - 519

SP - 2508

EP - 2512

JO - Thin Solid Films

JF - Thin Solid Films

IS - 8

ER -

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Abstract

Keywords

ASJC Scopus subject areas

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