High Performance AI0.48In0.52As/Ga0.47In0.53As HFETs

H. Dämbkes; P. Marschall; Y. H. Zhang; K. Ploog

doi:10.1049/el:19900317

High Performance AI_0.48In_0.52As/Ga_0.47In_0.53As HFETs

H. Dämbkes, P. Marschall, Y. H. Zhang, K. Ploog

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

MBE grown Al_0.48In_0.52As/Ga_0.47In_0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3µm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of–4.5V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12mS/mm and a transconductance in excess of 420mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3µm gate length. These values are the highest reported for devices of this geometry at room temperature.

Original language	English (US)
Pages (from-to)	488-490
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	7
DOIs	https://doi.org/10.1049/el:19900317
State	Published - Jan 1 1990
Externally published	Yes

Keywords

Field-effect transistors
Indium compounds
Microwave devices and components
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19900317

Cite this

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title = "High Performance AI0.48In0.52As/Ga0.47In0.53As HFETs",

abstract = "MBE grown Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3µm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of–4.5V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12mS/mm and a transconductance in excess of 420mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3µm gate length. These values are the highest reported for devices of this geometry at room temperature.",

keywords = "Field-effect transistors, Indium compounds, Microwave devices and components, Semiconductor devices and materials",

author = "H. D{\"a}mbkes and P. Marschall and Zhang, {Y. H.} and K. Ploog",

year = "1990",

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T1 - High Performance AI0.48In0.52As/Ga0.47In0.53As HFETs

AU - Dämbkes, H.

AU - Marschall, P.

AU - Zhang, Y. H.

AU - Ploog, K.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - MBE grown Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3µm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of–4.5V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12mS/mm and a transconductance in excess of 420mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3µm gate length. These values are the highest reported for devices of this geometry at room temperature.

AB - MBE grown Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3µm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of–4.5V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12mS/mm and a transconductance in excess of 420mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3µm gate length. These values are the highest reported for devices of this geometry at room temperature.

KW - Field-effect transistors

KW - Indium compounds

KW - Microwave devices and components

KW - Semiconductor devices and materials

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