High Performance AI0.48In0.52As/Ga0.47In0.53As HFETs

H. Dämbkes, P. Marschall, Y. H. Zhang, K. Ploog

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

MBE grown Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3µm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of–4.5V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12mS/mm and a transconductance in excess of 420mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3µm gate length. These values are the highest reported for devices of this geometry at room temperature.

Original languageEnglish (US)
Pages (from-to)488-490
Number of pages3
JournalElectronics Letters
Volume26
Issue number7
DOIs
StatePublished - Jan 1 1990
Externally publishedYes

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Keywords

  • Field-effect transistors
  • Indium compounds
  • Microwave devices and components
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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