MBE grown Al0.48In0.52As/Ga0.47In0.53As heterostructure field effect transistors have been fabricated on InP substrates. DC characteristics of 1.3µm gate devices show no kink effects and no breakdown, even for drain to gate voltages in excess of–4.5V, thus demonstrating excellent material properties. High frequency investigations reveal a very low output conductance of about 12mS/mm and a transconductance in excess of 420mS/mm. Cutoff frequencies of 75 GHz are achieved for 1.3µm gate length. These values are the highest reported for devices of this geometry at room temperature.
- Field-effect transistors
- Indium compounds
- Microwave devices and components
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering