High-k/Si interface engineering using a valence-mending technique

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A monolayer of Se is deposited on Si(100) before high-k deposition. HfO2 and Al2O3 are deposited by 'gentle' methods of evaporation/oxidation, CVD and ALD. Significant improvement in interface and high-k properties are observed with Se, including suppression of interfacial oxide above 400°C, reduction in leakage current by over an order of magnitude, reduction in C-V hysteresis by a factor of 2 and reduction in interface trap density by a factor of 5. Further improvement in thermal stability above 1,000°C and EOT below 1 nm requires 1) a non-oxide high-k dielectric to prevent interfacial oxide and 2) an in-situ ultrahigh vacuum process for surface preparation and high-k deposition to prevent surface contamination. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
PublisherElectrochemical Society Inc.
Pages129-143
Number of pages15
Edition1
ISBN (Electronic)1566774381
ISBN (Print)1566774381, 9781566774383
StatePublished - 2006
Externally publishedYes
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityDenver, CO
Period5/7/065/12/06

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'High-k/Si interface engineering using a valence-mending technique'. Together they form a unique fingerprint.

Cite this