TY - GEN
T1 - High-k/Si interface engineering using a valence-mending technique
AU - Tao, M.
PY - 2006
Y1 - 2006
N2 - A monolayer of Se is deposited on Si(100) before high-k deposition. HfO2 and Al2O3 are deposited by 'gentle' methods of evaporation/oxidation, CVD and ALD. Significant improvement in interface and high-k properties are observed with Se, including suppression of interfacial oxide above 400°C, reduction in leakage current by over an order of magnitude, reduction in C-V hysteresis by a factor of 2 and reduction in interface trap density by a factor of 5. Further improvement in thermal stability above 1,000°C and EOT below 1 nm requires 1) a non-oxide high-k dielectric to prevent interfacial oxide and 2) an in-situ ultrahigh vacuum process for surface preparation and high-k deposition to prevent surface contamination. Copyright The Electrochemical Society.
AB - A monolayer of Se is deposited on Si(100) before high-k deposition. HfO2 and Al2O3 are deposited by 'gentle' methods of evaporation/oxidation, CVD and ALD. Significant improvement in interface and high-k properties are observed with Se, including suppression of interfacial oxide above 400°C, reduction in leakage current by over an order of magnitude, reduction in C-V hysteresis by a factor of 2 and reduction in interface trap density by a factor of 5. Further improvement in thermal stability above 1,000°C and EOT below 1 nm requires 1) a non-oxide high-k dielectric to prevent interfacial oxide and 2) an in-situ ultrahigh vacuum process for surface preparation and high-k deposition to prevent surface contamination. Copyright The Electrochemical Society.
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M3 - Conference contribution
AN - SCOPUS:33745443315
SN - 1566774381
SN - 9781566774383
T3 - ECS Transactions
SP - 129
EP - 143
BT - Dielectrics for Nanosystems II
PB - Electrochemical Society Inc.
T2 - 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Y2 - 7 May 2006 through 12 May 2006
ER -