High-k/Si interface engineering using a valence-mending technique

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A monolayer of Se is deposited on Si(100) before high-k deposition. HfO2 and Al2O3 are deposited by 'gentle' methods of evaporation/oxidation, CVD and ALD. Significant improvement in interface and high-k properties are observed with Se, including suppression of interfacial oxide above 400°C, reduction in leakage current by over an order of magnitude, reduction in C-V hysteresis by a factor of 2 and reduction in interface trap density by a factor of 5. Further improvement in thermal stability above 1,000°C and EOT below 1 nm requires 1) a non-oxide high-k dielectric to prevent interfacial oxide and 2) an in-situ ultrahigh vacuum process for surface preparation and high-k deposition to prevent surface contamination. Copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages129-143
Number of pages15
Edition1
StatePublished - Jul 3 2006
Externally publishedYes
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityDenver, CO
Period5/7/065/12/06

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'High-k/Si interface engineering using a valence-mending technique'. Together they form a unique fingerprint.

Cite this