High frequency transport in bi-layer graphene FET devices

M. Mahjoub, N. Aoki, J. Song, J. P. Bird, D. K. Ferry, Y. Kawano, K. Ishibashi, Y. Ochiai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to study on THz radiation pick upping by use of graphene nano-structures, we explore the use of quntum dot as nano scale GHz-THz detector with a high sensitive and/or a wide range frequency response. A fundamental possibility in the device application has been studied.

Original languageEnglish (US)
Title of host publicationIRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
DOIs
StatePublished - Dec 1 2011
Event36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 - Houston, TX, United States
Duration: Oct 2 2011Oct 7 2011

Publication series

NameIRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

Other

Other36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
CountryUnited States
CityHouston, TX
Period10/2/1110/7/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Mahjoub, M., Aoki, N., Song, J., Bird, J. P., Ferry, D. K., Kawano, Y., Ishibashi, K., & Ochiai, Y. (2011). High frequency transport in bi-layer graphene FET devices. In IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves [6104877] (IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves). https://doi.org/10.1109/irmmw-THz.2011.6104877