High frequency transport in bi-layer graphene FET devices

M. Mahjoub; N. Aoki; J. Song; J. P. Bird; D. K. Ferry; Y. Kawano; K. Ishibashi; Y. Ochiai

doi:10.1109/irmmw-THz.2011.6104877

High frequency transport in bi-layer graphene FET devices

M. Mahjoub, N. Aoki, J. Song, J. P. Bird, D. K. Ferry, Y. Kawano, K. Ishibashi, Y. Ochiai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In order to study on THz radiation pick upping by use of graphene nano-structures, we explore the use of quntum dot as nano scale GHz-THz detector with a high sensitive and/or a wide range frequency response. A fundamental possibility in the device application has been studied.

Original language	English (US)
Title of host publication	IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
DOIs	https://doi.org/10.1109/irmmw-THz.2011.6104877
State	Published - Dec 1 2011
Event	36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 - Houston, TX, United States Duration: Oct 2 2011 → Oct 7 2011

Publication series

Name	IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

Other

Other	36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
Country/Territory	United States
City	Houston, TX
Period	10/2/11 → 10/7/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/irmmw-THz.2011.6104877

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Mahjoub, M., Aoki, N., Song, J., Bird, J. P., Ferry, D. K., Kawano, Y., Ishibashi, K., & Ochiai, Y. (2011). High frequency transport in bi-layer graphene FET devices. In IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves Article 6104877 (IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves). https://doi.org/10.1109/irmmw-THz.2011.6104877

High frequency transport in bi-layer graphene FET devices. / Mahjoub, M.; Aoki, N.; Song, J. et al.
IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves. 2011. 6104877 (IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mahjoub, M, Aoki, N, Song, J, Bird, JP, Ferry, DK, Kawano, Y, Ishibashi, K & Ochiai, Y 2011, High frequency transport in bi-layer graphene FET devices. in IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves., 6104877, IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011, Houston, TX, United States, 10/2/11. https://doi.org/10.1109/irmmw-THz.2011.6104877

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author = "M. Mahjoub and N. Aoki and J. Song and Bird, {J. P.} and Ferry, {D. K.} and Y. Kawano and K. Ishibashi and Y. Ochiai",

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AU - Aoki, N.

AU - Song, J.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Kawano, Y.

AU - Ishibashi, K.

AU - Ochiai, Y.

PY - 2011/12/1

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AB - In order to study on THz radiation pick upping by use of graphene nano-structures, we explore the use of quntum dot as nano scale GHz-THz detector with a high sensitive and/or a wide range frequency response. A fundamental possibility in the device application has been studied.

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M3 - Conference contribution

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T3 - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

BT - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

T2 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011

Y2 - 2 October 2011 through 7 October 2011

ER -

High frequency transport in bi-layer graphene FET devices

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