The room-temperature velocity-field characteristics of bulk gallium nitride test structures were determined using a pulsed voltage input and four point measurements. Many devices with etched constructions were measured. A peak electron velocity was attained at a field of 180kV/cm, in agreement with theoretical predictions.
- Drift velocity
- High-field transport
- Velocity-field characteristic
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering