High-field transport studies of GaN

J. M. Barker, R. Akis, D. K. Ferry, Stephen Goodnick, Trevor Thornton, D. D. Koleske, A. E. Wickenden, R. L. Henry

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

The room-temperature velocity-field characteristics of bulk gallium nitride test structures were determined using a pulsed voltage input and four point measurements. Many devices with etched constructions were measured. A peak electron velocity was attained at a field of 180kV/cm, in agreement with theoretical predictions.

Original languageEnglish (US)
Pages (from-to)39-41
Number of pages3
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

Keywords

  • Drift velocity
  • GaN
  • High-field transport
  • Velocity-field characteristic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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