High-field transport studies of GaN

J. M. Barker; R. Akis; D. K. Ferry; Stephen Goodnick; Trevor Thornton; D. D. Koleske; A. E. Wickenden; R. L. Henry

doi:10.1016/S0921-4526(01)01453-3

High-field transport studies of GaN

J. M. Barker, R. Akis, D. K. Ferry, Stephen Goodnick, Trevor Thornton, D. D. Koleske, A. E. Wickenden, R. L. Henry

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The room-temperature velocity-field characteristics of bulk gallium nitride test structures were determined using a pulsed voltage input and four point measurements. Many devices with etched constructions were measured. A peak electron velocity was attained at a field of 180kV/cm, in agreement with theoretical predictions.

Original language	English (US)
Pages (from-to)	39-41
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01453-3
State	Published - Mar 2002

Keywords

Drift velocity
GaN
High-field transport
Velocity-field characteristic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)01453-3

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title = "High-field transport studies of GaN",

abstract = "The room-temperature velocity-field characteristics of bulk gallium nitride test structures were determined using a pulsed voltage input and four point measurements. Many devices with etched constructions were measured. A peak electron velocity was attained at a field of 180kV/cm, in agreement with theoretical predictions.",

keywords = "Drift velocity, GaN, High-field transport, Velocity-field characteristic",

author = "Barker, {J. M.} and R. Akis and Ferry, {D. K.} and Stephen Goodnick and Trevor Thornton and Koleske, {D. D.} and Wickenden, {A. E.} and Henry, {R. L.}",

year = "2002",

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doi = "10.1016/S0921-4526(01)01453-3",

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T1 - High-field transport studies of GaN

AU - Barker, J. M.

AU - Akis, R.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Thornton, Trevor

AU - Koleske, D. D.

AU - Wickenden, A. E.

AU - Henry, R. L.

PY - 2002/3

Y1 - 2002/3

N2 - The room-temperature velocity-field characteristics of bulk gallium nitride test structures were determined using a pulsed voltage input and four point measurements. Many devices with etched constructions were measured. A peak electron velocity was attained at a field of 180kV/cm, in agreement with theoretical predictions.

AB - The room-temperature velocity-field characteristics of bulk gallium nitride test structures were determined using a pulsed voltage input and four point measurements. Many devices with etched constructions were measured. A peak electron velocity was attained at a field of 180kV/cm, in agreement with theoretical predictions.

KW - Drift velocity

KW - GaN

KW - High-field transport

KW - Velocity-field characteristic

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U2 - 10.1016/S0921-4526(01)01453-3

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

High-field transport studies of GaN

Abstract

Keywords

ASJC Scopus subject areas

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