Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Heterojunctions 84%
• Semiconductor materials 57%
• Topological insulators 33%
• Distributed Bragg reflectors 31%
• Zinc Selenide 29%
• Lattice mismatch 28%
• Conduction bands 27%
• III-V semiconductors 26%
• Hole mobility 26%
• Electron mobility 25%
• Epitaxial films 24%
• Electron microscopy 20%
• Photodetectors 20%
• Crystallinity 19%
• Optoelectronic devices 18%
• Energy gap 18%
• Salts 15%
• Electric fields 14%
• Characterization (materials science) 14%
• Physics 13%
• Rocks 13%
• Materials properties 13%
• Color 11%
• Defects 11%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Band Offset 51%
• Condensed Matter 49%
• Semiconductor 49%
• Epitaxial Film 45%
• Electron Mobility 38%
• Hole Mobility 38%
• Nonconductor 36%
• Conduction Band 34%
• Optoelectronics 29%
• Electron Microscopy 28%
• Crystallinity 24%
• Band Gap 24%
• Application 20%
• Amount 13%

Physics & Astronomy

• molecular beam epitaxy 54%
• zincblende 53%
• halites 27%
• hole mobility 24%
• Bragg reflectors 24%
• electron mobility 22%
• optoelectronic devices 21%
• photometers 19%
• crystallinity 19%
• electron microscopy 18%
• conduction bands 18%
• insulators 15%
• color 15%
• physics 13%
• electric fields 12%
• characterization 11%
• defects 11%
• electronics 11%