Hall measurements on trap states in n-channel Si MOSFETS at 77 K

B. T. Moore; D. K. Ferry

doi:10.1016/0038-1098(80)90847-9

Hall measurements on trap states in n-channel Si MOSFETS at 77 K

B. T. Moore, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

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Abstract

We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.

Original language	English (US)
Pages (from-to)	509-511
Number of pages	3
Journal	Solid State Communications
Volume	33
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(80)90847-9
State	Published - Feb 1980
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(80)90847-9

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title = "Hall measurements on trap states in n-channel Si MOSFETS at 77 K",

abstract = "We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.",

author = "Moore, {B. T.} and Ferry, {D. K.}",

note = "Funding Information: * Work supported by the Office of Naval Research. Funding Information: Acknowledgements — the authors acknowledge many helpful discussions with B.D. McCombe, P.J. Stiles, F.J. Feigi, J. Wager, C.W. Wilmsen, and C.T. White. They also gratefully acknowledge the support of NRL in preparing the devices used in this study.",

year = "1980",

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T1 - Hall measurements on trap states in n-channel Si MOSFETS at 77 K

AU - Moore, B. T.

AU - Ferry, D. K.

N1 - Funding Information: * Work supported by the Office of Naval Research. Funding Information: Acknowledgements — the authors acknowledge many helpful discussions with B.D. McCombe, P.J. Stiles, F.J. Feigi, J. Wager, C.W. Wilmsen, and C.T. White. They also gratefully acknowledge the support of NRL in preparing the devices used in this study.

PY - 1980/2

Y1 - 1980/2

N2 - We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.

AB - We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.

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Hall measurements on trap states in n-channel Si MOSFETS at 77 K

Abstract

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