@article{a6a933a98f7240cab154f85eb85c09e4,
title = "Hall measurements on trap states in n-channel Si MOSFETS at 77 K",
abstract = "We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.",
author = "Moore, {B. T.} and Ferry, {D. K.}",
note = "Funding Information: * Work supported by the Office of Naval Research. Funding Information: Acknowledgements — the authors acknowledge many helpful discussions with B.D. McCombe, P.J. Stiles, F.J. Feigi, J. Wager, C.W. Wilmsen, and C.T. White. They also gratefully acknowledge the support of NRL in preparing the devices used in this study.",
year = "1980",
month = feb,
doi = "10.1016/0038-1098(80)90847-9",
language = "English (US)",
volume = "33",
pages = "509--511",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "5",
}