Hall measurements on trap states in n-channel Si MOSFETS at 77 K

B. T. Moore, D. K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.

Original languageEnglish (US)
Pages (from-to)509-511
Number of pages3
JournalSolid State Communications
Volume33
Issue number5
DOIs
StatePublished - Feb 1980

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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