Hall measurements on trap states in n-channel Si MOSFETS at 77 K

B. T. Moore; D. K. Ferry

doi:10.1016/0038-1098(80)90847-9

Hall measurements on trap states in n-channel Si MOSFETS at 77 K

B. T. Moore, D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article

1 Scopus citations

Abstract

We report here on Hall studies of transport in n-channel MOSFETs at 77 K. We find a fraction of the carriers are localized in trap states lying within the conduction band. These states are not effective as scattering centers.

Original language	English (US)
Pages (from-to)	509-511
Number of pages	3
Journal	Solid State Communications
Volume	33
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(80)90847-9
State	Published - Feb 1980

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ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Moore, B. T., & Ferry, D. K. (1980). Hall measurements on trap states in n-channel Si MOSFETS at 77 K. Solid State Communications, 33(5), 509-511. https://doi.org/10.1016/0038-1098(80)90847-9

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10.1016/0038-1098(80)90847-9