Abstract

Using the Au-seeded vapor-liquid-solid technique, epitaxial single-crystal Si nanowires (NWs) can be grown laterally along Si(111) substrates that have been miscut toward [112̄]. The ratio of lateral-to-vertical NWs increases as the miscut angle increases and as disilane pressure and substrate temperature decrease. By exploiting these trends, conditions can be identified whereby all of the deposited Au seeds form lateral NWs. Growth is guided along the nanofaceted substrate via a mechanism that involves pinning of the trijunction at the liquid/solid interface of the growing nanowire.

Original languageEnglish (US)
Pages (from-to)3878-3883
Number of pages6
JournalNano Letters
Volume13
Issue number8
DOIs
StatePublished - Aug 14 2013

Fingerprint

Nanowires
nanowires
Substrates
Liquids
liquid-solid interfaces
Seed
seeds
Vapors
Single crystals
vapors
trends
single crystals
liquids
Temperature
temperature

Keywords

  • Epitaxy
  • guided growth
  • in-plane or lateral Si nanowires
  • miscut
  • nanofaceted substrate
  • VLS

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Guided VLS growth of epitaxial lateral Si nanowires. / Rathi, Somilkumar J.; Smith, David; Drucker, Jeffery.

In: Nano Letters, Vol. 13, No. 8, 14.08.2013, p. 3878-3883.

Research output: Contribution to journalArticle

Rathi, Somilkumar J. ; Smith, David ; Drucker, Jeffery. / Guided VLS growth of epitaxial lateral Si nanowires. In: Nano Letters. 2013 ; Vol. 13, No. 8. pp. 3878-3883.
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