Abstract

Using the Au-seeded vapor-liquid-solid technique, epitaxial single-crystal Si nanowires (NWs) can be grown laterally along Si(111) substrates that have been miscut toward [112̄]. The ratio of lateral-to-vertical NWs increases as the miscut angle increases and as disilane pressure and substrate temperature decrease. By exploiting these trends, conditions can be identified whereby all of the deposited Au seeds form lateral NWs. Growth is guided along the nanofaceted substrate via a mechanism that involves pinning of the trijunction at the liquid/solid interface of the growing nanowire.

Original languageEnglish (US)
Pages (from-to)3878-3883
Number of pages6
JournalNano Letters
Volume13
Issue number8
DOIs
StatePublished - Aug 14 2013

Keywords

  • Epitaxy
  • VLS
  • guided growth
  • in-plane or lateral Si nanowires
  • miscut
  • nanofaceted substrate

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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