TY - GEN
T1 - Growth of single-phase wurtzite BAlN with 7.2%-B contents
AU - Li, Xiaohang
AU - Wang, Shuo
AU - Liu, Hanxiao
AU - Ponce, Fernando
AU - Detchprohm, Theeradetch
AU - Dupuis, Russell
PY - 2016/12/16
Y1 - 2016/12/16
N2 - We report on growth of 100-nm single-phase wurtzite BAlN layers with B contents up to 7.2% by MOCVD, which can be potentially applied to deep UV DBRs for VCSELs.
AB - We report on growth of 100-nm single-phase wurtzite BAlN layers with B contents up to 7.2% by MOCVD, which can be potentially applied to deep UV DBRs for VCSELs.
UR - http://www.scopus.com/inward/record.url?scp=85010653749&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85010653749&partnerID=8YFLogxK
U2 - 10.1364/cleo_si.2016.stu3r.4
DO - 10.1364/cleo_si.2016.stu3r.4
M3 - Conference contribution
AN - SCOPUS:85010653749
T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016
Y2 - 5 June 2016 through 10 June 2016
ER -