Growth of single-phase wurtzite BAlN with 7.2%-B contents

Xiaohang Li, Shuo Wang, Hanxiao Liu, Fernando Ponce, Theeradetch Detchprohm, Russell Dupuis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on growth of 100-nm single-phase wurtzite BAlN layers with B contents up to 7.2% by MOCVD, which can be potentially applied to deep UV DBRs for VCSELs.

Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
StatePublished - Dec 16 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period6/5/166/10/16

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Li, X., Wang, S., Liu, H., Ponce, F., Detchprohm, T., & Dupuis, R. (2016). Growth of single-phase wurtzite BAlN with 7.2%-B contents. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7789116] (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/cleo_si.2016.stu3r.4