TY - GEN
T1 - Growth of InGaP alloy nanowires with widely tunable bandgaps on silicon substrates
AU - Amiri, S. E.H.
AU - Ranga, P.
AU - Li, D. Y.
AU - Fan, F.
AU - Ning, Cun-Zheng
N1 - Publisher Copyright:
© 2017 OSA.
PY - 2017
Y1 - 2017
N2 - InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.
AB - InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.
UR - http://www.scopus.com/inward/record.url?scp=85020255754&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85020255754&partnerID=8YFLogxK
U2 - 10.1364/CLEO_SI.2017.STh3I.4
DO - 10.1364/CLEO_SI.2017.STh3I.4
M3 - Conference contribution
AN - SCOPUS:85020255754
SN - 9781943580279
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - Optica Publishing Group (formerly OSA)
T2 - CLEO: Science and Innovations, CLEO_SI 2017
Y2 - 14 May 2017 through 19 May 2017
ER -