Abstract

InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.

Original languageEnglish (US)
Title of host publication2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
Volume2017-January
ISBN (Electronic)9781943580279
DOIs
StatePublished - Oct 25 2017
Event2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
Duration: May 14 2017May 19 2017

Other

Other2017 Conference on Lasers and Electro-Optics, CLEO 2017
CountryUnited States
CitySan Jose
Period5/14/175/19/17

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Amiri, S. E. H., Ranga, P., Li, D. Y., Fan, F., & Ning, C-Z. (2017). Growth of InGaP alloy nanowires with widely tunable bandgaps on silicon substrates. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_SI.2017.STh3I.4