Abstract

InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2017
PublisherOSA - The Optical Society
ISBN (Print)9781943580279
DOIs
StatePublished - 2017
EventCLEO: Science and Innovations, CLEO_SI 2017 - San Jose, United States
Duration: May 14 2017May 19 2017

Publication series

NameOptics InfoBase Conference Papers
VolumePart F41-CLEO_SI 2017

Other

OtherCLEO: Science and Innovations, CLEO_SI 2017
CountryUnited States
CitySan Jose
Period5/14/175/19/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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