Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO₂ on SrTiO₃-buffered Si(001)

Engineering & Materials Science

• Strontium titanates 100%
• Atomic layer deposition 81%
• Crystallization 58%
• Annealing 53%
• Oxides 45%
• Silicon 42%
• Molecular beam epitaxy 41%
• Titanium dioxide 34%
• Substrates 18%
• Vacuum 15%
• Photoelectron spectroscopy 15%
• Growth temperature 14%
• Epitaxial films 13%
• Buffer layers 12%
• Oxide films 11%
• Crystallinity 10%
• Temperature 10%
• X ray diffraction 8%
• Titanium 8%
• X rays 8%
• Water 4%

Physics & Astronomy

• strontium titanates 66%
• atomic layer epitaxy 55%
• crystallization 40%
• oxides 33%
• annealing 32%
• silicon 28%
• molecular beam epitaxy 22%
• anatase 19%
• chambers 14%
• vacuum 11%
• temperature 10%
• titanium oxides 9%
• x ray spectroscopy 9%
• templates 8%
• oxide films 8%
• crystallinity 7%
• buffers 7%
• titanium 7%
• photoelectron spectroscopy 7%
• water 5%
• diffraction 4%
• x rays 4%

Chemical Compounds

• Atomic Layer Epitaxy 61%
• Annealing 42%
• Crystallization 37%
• Oxide 28%
• Molecular Beam Epitaxy 25%
• Titanium Dioxide 22%
• Liquid Film 17%
• Vacuum 14%
• Amorphous Material 12%
• Molecular Beam 10%
• Deposition Process 9%
• Photoelectron Spectroscopy 8%
• Crystallinity 6%
• Buffer Solution 5%
• X-Ray Diffraction 4%
• Amount 3%
• Surface 2%