Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

W. Platow; R. J. Nemanich; D. E. Sayers; J. D. Hartman; R. F. Davis

doi:10.1063/1.1412842

Growth of epitaxial CoSi₂ on 6H-SiC(0001)_Si

W. Platow, R. J. Nemanich, D. E. Sayers, J. D. Hartman, R. F. Davis

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Epitaxial growth of (111)-oriented CoSi₂ has been achieved on a scratch-free 6H-SiC(0001)_Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi₂ thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

Original language	English (US)
Pages (from-to)	5924-5927
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.1412842
State	Published - Dec 15 2001
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Growth of epitaxial CoSi2 on 6H-SiC(0001)Si",

abstract = "Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.",

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AU - Platow, W.

AU - Nemanich, R. J.

AU - Sayers, D. E.

AU - Hartman, J. D.

AU - Davis, R. F.

PY - 2001/12/15

Y1 - 2001/12/15

N2 - Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

AB - Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

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JF - Journal of Applied Physics

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ER -

Growth of epitaxial CoSi₂ on 6H-SiC(0001)_Si

Abstract

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