Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

W. Platow, R. J. Nemanich, D. E. Sayers, J. D. Hartman, R. F. Davis

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

Original languageEnglish (US)
Pages (from-to)5924-5927
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number12
DOIs
StatePublished - Dec 15 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Growth of epitaxial CoSi<sub>2</sub> on 6H-SiC(0001)<sub>Si</sub>'. Together they form a unique fingerprint.

  • Cite this

    Platow, W., Nemanich, R. J., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2001). Growth of epitaxial CoSi2 on 6H-SiC(0001)Si. Journal of Applied Physics, 90(12), 5924-5927. https://doi.org/10.1063/1.1412842