Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

W. Platow; R. J. Nemanich; D. E. Sayers; J. D. Hartman; R. F. Davis

doi:10.1063/1.1412842

Growth of epitaxial CoSi₂ on 6H-SiC(0001)_Si

W. Platow, R. J. Nemanich, D. E. Sayers, J. D. Hartman, R. F. Davis

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Epitaxial growth of (111)-oriented CoSi₂ has been achieved on a scratch-free 6H-SiC(0001)_Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi₂ thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

Original language	English (US)
Pages (from-to)	5924-5927
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.1412842
State	Published - Dec 15 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{ef33247d56754e17951ca80a24db6816,

title = "Growth of epitaxial CoSi2 on 6H-SiC(0001)Si",

abstract = "Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.",

author = "W. Platow and Nemanich, {R. J.} and Sayers, {D. E.} and Hartman, {J. D.} and Davis, {R. F.}",

year = "2001",

month = dec,

day = "15",

doi = "10.1063/1.1412842",

language = "English (US)",

volume = "90",

pages = "5924--5927",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

AU - Platow, W.

AU - Nemanich, R. J.

AU - Sayers, D. E.

AU - Hartman, J. D.

AU - Davis, R. F.

PY - 2001/12/15

Y1 - 2001/12/15

N2 - Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

AB - Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0035894295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035894295&partnerID=8YFLogxK

U2 - 10.1063/1.1412842

DO - 10.1063/1.1412842

M3 - Article

AN - SCOPUS:0035894295

SN - 0021-8979

VL - 90

SP - 5924

EP - 5927

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Growth of epitaxial CoSi₂ on 6H-SiC(0001)_Si

Abstract

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