Growth of epitaxial CoSi2 on 6H-SiC(0001)Si

W. Platow, Robert Nemanich, D. E. Sayers, J. D. Hartman, R. F. Davis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Epitaxial growth of (111)-oriented CoSi2 has been achieved on a scratch-free 6H-SiC(0001)Si substrate. The surface was prepared using atmospheric hydrogen etching and ultrahigh vacuum Si cleaning. A high-quality CoSi2 thin film was obtained by a modified template method and co-deposition of Co and Si at 550°C. The structure and morphology of the film is studied by means of reflection high electron energy diffraction, x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy.

Original languageEnglish (US)
Pages (from-to)5924-5927
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number12
DOIs
StatePublished - Dec 15 2001
Externally publishedYes

Fingerprint

x ray absorption
high energy electrons
cleaning
ultrahigh vacuum
x ray diffraction
templates
fine structure
etching
atomic force microscopy
vacuum
hydrogen
thin films
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Platow, W., Nemanich, R., Sayers, D. E., Hartman, J. D., & Davis, R. F. (2001). Growth of epitaxial CoSi2 on 6H-SiC(0001)Si Journal of Applied Physics, 90(12), 5924-5927. https://doi.org/10.1063/1.1412842

Growth of epitaxial CoSi2 on 6H-SiC(0001)Si . / Platow, W.; Nemanich, Robert; Sayers, D. E.; Hartman, J. D.; Davis, R. F.

In: Journal of Applied Physics, Vol. 90, No. 12, 15.12.2001, p. 5924-5927.

Research output: Contribution to journalArticle

Platow, W, Nemanich, R, Sayers, DE, Hartman, JD & Davis, RF 2001, 'Growth of epitaxial CoSi2 on 6H-SiC(0001)Si ', Journal of Applied Physics, vol. 90, no. 12, pp. 5924-5927. https://doi.org/10.1063/1.1412842
Platow, W. ; Nemanich, Robert ; Sayers, D. E. ; Hartman, J. D. ; Davis, R. F. / Growth of epitaxial CoSi2 on 6H-SiC(0001)Si In: Journal of Applied Physics. 2001 ; Vol. 90, No. 12. pp. 5924-5927.
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