Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy

F. M. Ross, Peter Bennett, R. M. Tromp, J. Tersoff, M. Reuter

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


We describe observations of the growth kinetics of nanosize islands in two heteroepitaxial systems, Ge/Si and CoSi2/Si. Growth was carried out during continuous observation in a modified ultra high vacuum transmission electron microscope. Ge islands were grown on Si(100) at 650°C using chemical vapour deposition and CoSi2 islands were grown by reactive epitaxy by evaporating Co onto a Si(111) substrate heated to 900°C. By analysing real-time observations of the development of individual islands, we show how the factors controlling island nucleation, growth and relaxation in these systems can be identified and understood. We discuss how the growth of these 'quantum dots' may be controlled for novel electronic and optoelectronic applications.

Original languageEnglish (US)
Pages (from-to)21-32
Number of pages12
Issue number1
StatePublished - Feb 1999


  • In situ ultra high vacuum transmission electron microscopy
  • Island formation
  • Semiconductor growth
  • Silicide growth
  • Strained layer heteroepitaxy

ASJC Scopus subject areas

  • Structural Biology
  • Materials Science(all)
  • Physics and Astronomy(all)
  • Cell Biology


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