GROWTH AND CHARACTERIZATION OF HIGH PURITY H//2-In-HCl-PH//3 VAPOR PHASE EPITAXY (VPE) InP.

T. J. Roth, Brian Skromme, T. S. Low, G. E. Stillman, L. M. Zinkiewicz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations
Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Pages36-44
Number of pages9
VolumeV 323
StatePublished - 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Roth, T. J., Skromme, B., Low, T. S., Stillman, G. E., & Zinkiewicz, L. M. (1982). GROWTH AND CHARACTERIZATION OF HIGH PURITY H//2-In-HCl-PH//3 VAPOR PHASE EPITAXY (VPE) InP. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. V 323, pp. 36-44). SPIE.