Grain boundaries in silicon nitride

K. Das Chowdhury, Ray Carpenter, W. Braue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Scopus citations

    Abstract

    The article presents a study on the grain boundaries of silicon nitride matrix in Si 3N 4/SiC(w) composites and polycrystalline CVD silicon nitride by high spatial resolution position resolved EELS and HREM imaging. The results showed no amorphous layer was seen at the grain boundary within the resolution limit, but a disordered region with structural width approximately equal to the SiN 4 tetrahedron size was seen. It is revealed that this disordered region is oxygen rich. The presence of oxygen is attributed upon the presence of sintering aids and/or impurity content of the bulk material.

    Original languageEnglish (US)
    Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
    PublisherPubl by San Francisco Press Inc
    Pages920-921
    Number of pages2
    StatePublished - 1993
    EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
    Duration: Aug 1 1993Aug 6 1993

    Other

    OtherProceedings of the 51st Annual Meeting Microscopy Society of America
    CityCincinnati, OH, USA
    Period8/1/938/6/93

    ASJC Scopus subject areas

    • Engineering(all)

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