Generalized stacking fault energies and slip in β-tin

M. A. Bhatia, I. Adlakha, G. Lu, Kiran Solanki

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The preferential slip systems in β-tin were investigated using density functional theory (DFT). The gamma surface entering dislocation modeling was calculated using DFT for three different nonequivalent slip systems in β-tin. The generalized stacking fault energies (GSFE) of different slip systems led to the conclusion that the {100) < 001] slip system is the most easily activated system. We also found that a full dislocation on the {101) and {100) planes will dissociate into a leading partial and a trailing partial. Overall, our study provides critical knowledge towards a comprehensive understanding of nonequivalent slip systems and subsequent deformation processes in β-tin.

Original languageEnglish (US)
Pages (from-to)21-25
Number of pages5
JournalScripta Materialia
Volume123
DOIs
StatePublished - Oct 1 2016

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Keywords

  • Density functional theory
  • Dislocation
  • Stacking fault energies
  • Tin

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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