GaN-on-Si transformer-coupled class D power amplifier

M. Ruhul Hasin, Jennifer Kitchen, Bertran Ardouin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology demonstrates 29.5% efficiency at maximum power. When driven with a silicon-based sigma-delta RF modulator, the PA processes a single-carrier WCDMA waveform with -40.4dBc ACPR<inf>1</inf>.

Original languageEnglish (US)
Title of host publicationPAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479955060
DOIs
StatePublished - Jun 29 2015
Event2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015 - San Diego, United States
Duration: Jan 25 2015Jan 28 2015

Other

Other2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2015
CountryUnited States
CitySan Diego
Period1/25/151/28/15

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Keywords

  • Class-D
  • device model
  • GaN
  • high-efficiency
  • RF power amplifiers
  • WCDMA

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Hasin, M. R., Kitchen, J., & Ardouin, B. (2015). GaN-on-Si transformer-coupled class D power amplifier. In PAWR 2015 - Proceedings; 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications [7139196] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PAWR.2015.7139196