Abstract

The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from 60Co. There is an increase in electron mobility from 2.8 to 8.8 cm2/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.

Original languageEnglish (US)
Pages (from-to)342-344
Number of pages3
JournalThin Solid Films
Volume539
DOIs
StatePublished - Jul 31 2013

Keywords

  • Gamma irradiation
  • Indium-zinc-oxide
  • Thin-film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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