Gamma radiation effects on indium-zinc oxide thin-film transistors

A. Indluru; Keith Holbert; Terry Alford

doi:10.1016/j.tsf.2013.04.148

Gamma radiation effects on indium-zinc oxide thin-film transistors

A. Indluru, Keith Holbert, Terry Alford

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38 Scopus citations

Abstract

The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from ⁶⁰Co. There is an increase in electron mobility from 2.8 to 8.8 cm²/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.

Original language	English (US)
Pages (from-to)	342-344
Number of pages	3
Journal	Thin Solid Films
Volume	539
DOIs	https://doi.org/10.1016/j.tsf.2013.04.148
State	Published - Jul 31 2013

Keywords

Gamma irradiation
Indium-zinc-oxide
Thin-film transistors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.04.148

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title = "Gamma radiation effects on indium-zinc oxide thin-film transistors",

abstract = "The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from 60Co. There is an increase in electron mobility from 2.8 to 8.8 cm2/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.",

keywords = "Gamma irradiation, Indium-zinc-oxide, Thin-film transistors",

author = "A. Indluru and Keith Holbert and Terry Alford",

note = "Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0902277 ) to whom the authors are greatly indebted.",

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doi = "10.1016/j.tsf.2013.04.148",

language = "English (US)",

volume = "539",

pages = "342--344",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Gamma radiation effects on indium-zinc oxide thin-film transistors

AU - Indluru, A.

AU - Holbert, Keith

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by the National Science Foundation (L. Hess, Grant No. DMR-0902277 ) to whom the authors are greatly indebted.

PY - 2013/7/31

Y1 - 2013/7/31

N2 - The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from 60Co. There is an increase in electron mobility from 2.8 to 8.8 cm2/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.

AB - The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from 60Co. There is an increase in electron mobility from 2.8 to 8.8 cm2/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.

KW - Gamma irradiation

KW - Indium-zinc-oxide

KW - Thin-film transistors

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SP - 342

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

Gamma radiation effects on indium-zinc oxide thin-film transistors

Abstract

Keywords

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