Abstract

The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from 60Co. There is an increase in electron mobility from 2.8 to 8.8 cm2/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.

Original languageEnglish (US)
Pages (from-to)342-344
Number of pages3
JournalThin Solid Films
Volume539
DOIs
StatePublished - Jul 31 2013

Fingerprint

Zinc Oxide
Indium
Radiation effects
radiation effects
Thin film transistors
Zinc oxide
Gamma rays
zinc oxides
indium oxides
Oxide films
transistors
gamma rays
thin films
Interface states
Electron mobility
Space applications
Amorphous silicon
electron mobility
Dosimetry
amorphous silicon

Keywords

  • Gamma irradiation
  • Indium-zinc-oxide
  • Thin-film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Gamma radiation effects on indium-zinc oxide thin-film transistors. / Indluru, A.; Holbert, Keith; Alford, Terry.

In: Thin Solid Films, Vol. 539, 31.07.2013, p. 342-344.

Research output: Contribution to journalArticle

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AB - The effect of gamma radiation on low-temperature fabricated indium-zinc-oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on voltage shift and sub-threshold swing degradation are observed after irradiation with a total dose of 1.7 Mrads from 60Co. There is an increase in electron mobility from 2.8 to 8.8 cm2/V-s after the exposure. The changes in the electrical properties of these TFTs are attributed to the combined effects of interface states creation and electron-hole pair generation in the insulating layer. Better electrical reliability of the IZO TFTs over amorphous-silicon TFTs makes them promising candidates for space applications.

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