Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands

S. Horst; S. Chatterjee; K. Hantke; P. J. Klar; I. Nemeth; W. Stolz; K. Volz; C. Bückers; A. Thränhardt; S. W. Koch; W. Rühle; Shane Johnson; J. B. Wang; Yong-Hang Zhang

doi:10.1002/pssc.200880338

Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, Shane Johnson, J. B. Wang, Yong-Hang Zhang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

Original language	English (US)
Pages (from-to)	411-414
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200880338
State	Published - Dec 1 2009
Event	9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 9 - Klink/Muritz, Germany Duration: May 26 2008 → May 29 2008

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200880338

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Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Rühle, W., Johnson, S., Wang, J. B., & Zhang, Y-H. (2009). Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(2), 411-414. https://doi.org/10.1002/pssc.200880338

Horst, S, Chatterjee, S, Hantke, K, Klar, PJ, Nemeth, I, Stolz, W, Volz, K, Bückers, C, Thränhardt, A, Koch, SW, Rühle, W, Johnson, S, Wang, JB & Zhang, Y-H 2009, 'Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 6, no. 2, pp. 411-414. https://doi.org/10.1002/pssc.200880338

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abstract = "Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.",

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T2 - 9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 9

AU - Horst, S.

AU - Chatterjee, S.

AU - Hantke, K.

AU - Klar, P. J.

AU - Nemeth, I.

AU - Stolz, W.

AU - Volz, K.

AU - Bückers, C.

AU - Thränhardt, A.

AU - Koch, S. W.

AU - Rühle, W.

AU - Johnson, Shane

AU - Wang, J. B.

AU - Zhang, Yong-Hang

PY - 2009/12/1

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N2 - Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

AB - Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

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ER -

Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands

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